Diodes Incorporated 2DD2652-7
- Part Number:
- 2DD2652-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464648-2DD2652-7
- Description:
- TRANS NPN 12V 1.5A SOT-323
- ECAD Model:
-
- Datasheet:
- 2DD2652-7
Diodes Incorporated 2DD2652-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DD2652-7.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency260MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2DD2652
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product260MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 200mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic200mV @ 25mA, 500mA
- Collector Emitter Breakdown Voltage12V
- Transition Frequency260MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage12V
- Collector Base Voltage (VCBO)15V
- Emitter Base Voltage (VEBO)6V
- Height1mm
- Length2.15mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
2DD2652-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 200mA 2V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 25mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 260MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
2DD2652-7 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 260MHz
2DD2652-7 Applications
There are a lot of Diodes Incorporated
2DD2652-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 200mA 2V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 25mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 260MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
2DD2652-7 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 260MHz
2DD2652-7 Applications
There are a lot of Diodes Incorporated
2DD2652-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2DD2652-7 More Descriptions
Small Signal Bipolar Transistor, 1.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
2DD2652: 12 V 1.5 A 300 mW Surface Mount NPN Transistor - SOT-323
Transistor, NPN, SOT323, 0.3W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:260MHz; Power Dissipation
Transistor, Npn, 12V, 500Ma, 300Mw, Sot-323; Transistor Polarity:Npn; Collector Emitter Voltage Max:12V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. 2DD2652-7
TRANSISTOR, NPN, SOT323, 0.3W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 260MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 260MHz; Hfe Min: 270; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)
2DD2652: 12 V 1.5 A 300 mW Surface Mount NPN Transistor - SOT-323
Transistor, NPN, SOT323, 0.3W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:260MHz; Power Dissipation
Transistor, Npn, 12V, 500Ma, 300Mw, Sot-323; Transistor Polarity:Npn; Collector Emitter Voltage Max:12V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. 2DD2652-7
TRANSISTOR, NPN, SOT323, 0.3W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 260MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 260MHz; Hfe Min: 270; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)
The three parts on the right have similar specifications to 2DD2652-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusCase ConnectionManufacturer Package IdentifierJESD-30 CodeCurrent - Collector (Ic) (Max)View Compare
-
2DD2652-715 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors300mWDUALGULL WING260260MHz402DD265231Single500mW300mWSWITCHING260MHzNPNNPN12V1.5A270 @ 200mA 2V100nA ICBO200mV @ 25mA, 500mA12V260MHz200mV12V15V6V1mm2.15mm1.3mmNo SVHCNoROHS3 Compliant----- -
13 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors900mWDUALFLAT260170MHz402DD267841Single2W900mWSWITCHING170MHzNPNNPN12V3A270 @ 500mA 2V100nA ICBO250mV @ 30mA, 1.5A12V170MHz250mV12V15V6V1.5mm4.5mm2.5mmNo SVHCNoROHS3 CompliantCOLLECTOR---
-
19 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors1W-FLAT260220MHz402DD209831Single1W-SWITCHING220MHzNPNNPN20V10A180 @ 500mA 2V500nA ICBO1V @ 100mA, 4A20V220MHz1V20V50V6V1.5mm4.5mm2.5mmNo SVHCNoROHS3 CompliantCOLLECTOR2DD2098R-13R-PSSO-F35A
-
15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors900mW-FLAT260170MHz402DD266131Single2W900mWSWITCHING170MHzNPNNPN12V2A270 @ 200mA 2V100nA ICBO180mV @ 50mA, 1A12V170MHz180mV12V15V6V1.5mm4.5mm2.5mmNo SVHCNoROHS3 CompliantCOLLECTOR2DD2661-13R-PSSO-F3-
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