ISSI, Integrated Silicon Solution Inc IS43TR82560C-125KBLI
- Part Number:
- IS43TR82560C-125KBLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7374599-IS43TR82560C-125KBLI
- Description:
- Memory IC 10.5mm mm
- Datasheet:
- IS43TR82560C-125KBLI
ISSI, Integrated Silicon Solution Inc IS43TR82560C-125KBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR82560C-125KBLI.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case78-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTray
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations78
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeaturePROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.5V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)10
- JESD-30 CodeR-PBGA-B78
- Supply Voltage-Max (Vsup)1.575V
- Supply Voltage-Min (Vsup)1.425V
- Memory Size2Gb 256M x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency800MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization256MX8
- Memory Width8
- Write Cycle Time - Word, Page15ns
- Memory Density2147483648 bit
- Length10.5mm
- Height Seated (Max)1.2mm
- Width8mm
- RoHS StatusROHS3 Compliant
IS43TR82560C-125KBLI Overview
There is a Volatile memory type associated with this device. Tray-cases are available. There is a 78-TFBGA case embedded in it. 2Gb 256M x 8 is the chip's memory size. DRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.425V~1.575V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 78 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 1.5V and should be used as such. In this memory, the clock frequency rotation is within an 800MHz range. Despite all the merits of this chip, it also has PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH to boost system performance. This memory chip has 1 ports for accessing one memory address via read or write.
IS43TR82560C-125KBLI Features
Package / Case: 78-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
IS43TR82560C-125KBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR82560C-125KBLI Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Volatile memory type associated with this device. Tray-cases are available. There is a 78-TFBGA case embedded in it. 2Gb 256M x 8 is the chip's memory size. DRAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.425V~1.575V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 78 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 1.5V and should be used as such. In this memory, the clock frequency rotation is within an 800MHz range. Despite all the merits of this chip, it also has PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH to boost system performance. This memory chip has 1 ports for accessing one memory address via read or write.
IS43TR82560C-125KBLI Features
Package / Case: 78-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
IS43TR82560C-125KBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR82560C-125KBLI Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
IS43TR82560C-125KBLI More Descriptions
Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~95C TC 1.425V 2147483648bit 8mm
DRAM Chip DDR3 SDRAM 2Gbit 256M X 8 1.5V 78-Pin TWBGA Tray
DDR SDRAM, 256Mx8, 1.5V, 8K, BGA-78,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 78TWBGA
DRAM 2G 256Mx8 1600MT/s DDR3 1.5V
2G, 1.5V, Ddr3, 256Mx8, 1600Mt/S @ 11-11-11, 78 Ball Bga (8Mm X10.5Mm) Rohs |Integrated Silicon Solution (Issi) IS43TR82560C-125KBLI
DRAM Chip DDR3 SDRAM 2Gbit 256M X 8 1.5V 78-Pin TWBGA Tray
DDR SDRAM, 256Mx8, 1.5V, 8K, BGA-78,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 78TWBGA
DRAM 2G 256Mx8 1600MT/s DDR3 1.5V
2G, 1.5V, Ddr3, 256Mx8, 1600Mt/S @ 11-11-11, 78 Ball Bga (8Mm X10.5Mm) Rohs |Integrated Silicon Solution (Issi) IS43TR82560C-125KBLI
The three parts on the right have similar specifications to IS43TR82560C-125KBLI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityLengthHeight Seated (Max)WidthRoHS StatusMountNumber of PinsHTS CodePin CountOperating Supply VoltageNominal Supply CurrentData Bus WidthOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRadiation HardeningLead FreeQualification StatusPower SuppliesSupply Current-MaxView Compare
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IS43TR82560C-125KBLI8 WeeksSurface Mount78-TFBGAYES-40°C~95°C TCTraye1Active3 (168 Hours)78EAR99Tin/Silver/Copper (Sn/Ag/Cu)PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR31.425V~1.575VBOTTOM26011.5V0.8mm10R-PBGA-B781.575V1.425V2Gb 256M x 81VolatileSYNCHRONOUS800MHz20nsDRAMParallel256MX8815ns2147483648 bit10.5mm1.2mm8mmROHS3 Compliant---------------------
-
8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)--40°C~85°C TATray-Active3 (168 Hours)66EAR99-AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL-12.5V0.65mm--2.7V2.3V256Mb 16M x 161Volatile-200MHz700psDRAMParallel16MX161615ns-22.22mm1.2mm-ROHS3 CompliantSurface Mount668542.32.00.24662.5V330mA16b3-STATE15b256 Mb0.004ACOMMON8192248248NoLead Free---
-
14 WeeksSurface Mount90-LFBGAYES0°C~70°C TATray-Active3 (168 Hours)90--AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--1.95V1.7V64Mb 2M x 321VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel32MX323215ns1073741824 bit13mm1.45mm8mmROHS3 Compliant-90-----3-STATE--0.00002ACOMMON81922481624816--Not Qualified1.8V0.22mA
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATray-Active3 (168 Hours)60EAR99-PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOMNOT SPECIFIED12.5V1mmNOT SPECIFIEDR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS166MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 Compliant--------------------
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