ISSI, Integrated Silicon Solution Inc IS43TR16640C-107MBLI
- Part Number:
- IS43TR16640C-107MBLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7371066-IS43TR16640C-107MBLI
- Description:
- Memory IC 13mm mm
- Datasheet:
- IS43TR16640C-107MBLI
ISSI, Integrated Silicon Solution Inc IS43TR16640C-107MBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43TR16640C-107MBLI.
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / Case96-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations96
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - DDR3
- Voltage - Supply1.425V~1.575V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.5V
- Terminal Pitch0.8mm
- JESD-30 CodeR-PBGA-B96
- Supply Voltage-Max (Vsup)1.575V
- Supply Voltage-Min (Vsup)1.425V
- Memory Size1Gb 64M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency933MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization64MX16
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Memory Density1073741824 bit
- Length13mm
- Height Seated (Max)1.2mm
- Width9mm
- RoHS StatusROHS3 Compliant
IS43TR16640C-107MBLI Overview
Its memory type can be classified as Volatile. It is supplied votage within Tray. It is available in 96-TFBGA case. The memory size of the chip is 1Gb 64M x 16 Mb. This device utilizes a DRAM format memory which is of mainstream design. With an extended designed operating temperature of -40°C~95°C TC, this device is capable of lots of demanding applications. It is supplied votage within 1.425V~1.575V. Its recommended mounting type is Surface Mount. 96 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.5V. The memory has a clock frequency rotation within 933MHz. In spite of all the merits this chip has, it also features AUTO/SELF REFRESH to level up system performance. There are 1 ports used in this chip to give read and/or write access to one memory address.
IS43TR16640C-107MBLI Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43TR16640C-107MBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16640C-107MBLI Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Volatile. It is supplied votage within Tray. It is available in 96-TFBGA case. The memory size of the chip is 1Gb 64M x 16 Mb. This device utilizes a DRAM format memory which is of mainstream design. With an extended designed operating temperature of -40°C~95°C TC, this device is capable of lots of demanding applications. It is supplied votage within 1.425V~1.575V. Its recommended mounting type is Surface Mount. 96 terminations are planted on the chip. This part supports as many as 1 functions for the comprehensive working procedure. This ic memory chip is designed to be supplied with 1.5V. The memory has a clock frequency rotation within 933MHz. In spite of all the merits this chip has, it also features AUTO/SELF REFRESH to level up system performance. There are 1 ports used in this chip to give read and/or write access to one memory address.
IS43TR16640C-107MBLI Features
Package / Case: 96-TFBGA
Additional Feature:AUTO/SELF REFRESH
IS43TR16640C-107MBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43TR16640C-107MBLI Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
IS43TR16640C-107MBLI More Descriptions
Active BOTTOM Volatile SYNCHRONOUS ic memory -40C~95C TC 1.425V 1073741824bit 9mm
SDRAM DDR3 Memory IC 1G-bit 64Mx16 1866MT/s 96-Pin BGA
1G, 1.5V, Ddr3, 64Mx16, 1866Mt/S @ 13-13-13, 96 Ball Bga (9Mm X13Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR16640C-107MBLI
SDRAM DDR3 Memory IC 1G-bit 64Mx16 1866MT/s 96-Pin BGA
1G, 1.5V, Ddr3, 64Mx16, 1866Mt/S @ 13-13-13, 96 Ball Bga (9Mm X13Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43TR16640C-107MBLI
The three parts on the right have similar specifications to IS43TR16640C-107MBLI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityLengthHeight Seated (Max)WidthRoHS StatusMountNumber of PinsECCN CodeHTS CodePin CountOperating Supply VoltageNominal Supply CurrentData Bus WidthOutput CharacteristicsAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRadiation HardeningLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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IS43TR16640C-107MBLI2 WeeksSurface Mount96-TFBGAYES-40°C~95°C TCTrayActive3 (168 Hours)96AUTO/SELF REFRESHSDRAM - DDR31.425V~1.575VBOTTOM11.5V0.8mmR-PBGA-B961.575V1.425V1Gb 64M x 161VolatileSYNCHRONOUS933MHz20nsDRAMParallel64MX161615ns1073741824 bit13mm1.2mm9mmROHS3 Compliant---------------------
-
8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)--40°C~85°C TATrayActive3 (168 Hours)66AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VDUAL12.5V0.65mm-2.7V2.3V256Mb 16M x 161Volatile-200MHz700psDRAMParallel16MX161615ns-22.22mm1.2mm-ROHS3 CompliantSurface Mount66EAR998542.32.00.24662.5V330mA16b3-STATE15b256 Mb0.004ACOMMON8192248248NoLead Free--
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mmR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS200MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 Compliant--EAR99---------------NOT SPECIFIEDNOT SPECIFIED
-
8 WeeksSurface Mount60-TFBGAYES-40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mmR-PBGA-B602.7V2.3V512Mb 32M x 161VolatileSYNCHRONOUS166MHz700psDRAMParallel32MX161615ns536870912 bit13mm1.2mm8mmROHS3 Compliant--EAR99---------------NOT SPECIFIEDNOT SPECIFIED
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