Micron Technology Inc. EDF8164A3MD-GD-F-R
- Part Number:
- EDF8164A3MD-GD-F-R
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7102178-EDF8164A3MD-GD-F-R
- Description:
- Memory IC
- Datasheet:
- EDF8164A3MD-GD-F-R
Micron Technology Inc. EDF8164A3MD-GD-F-R technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDF8164A3MD-GD-F-R.
- Operating Temperature-30°C~85°C TC
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySDRAM - Mobile LPDDR3
- Voltage - Supply1.14V~1.95V
- Memory Size8Gb 128M x 64
- Memory TypeVolatile
- Clock Frequency800MHz
- Memory FormatDRAM
- Memory InterfaceParallel
EDF8164A3MD-GD-F-R Overview
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. On the chip, there is an 8Gb 128M x 64 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -30°C~85°C TC, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 1.14V~1.95V volts. A clock frequency rotation within 800MHz is used for the ic memory chip to rotate data.
EDF8164A3MD-GD-F-R Features
This product is manufactured by Micron Technology Inc., is an electronic component of memory type. The operating temperature range for this component is -30°C to 85°C with a temperature coefficient of reference (TC). It comes in a packaging format known as Tape & Reel (TR). As per the part status, it has been marked as obsolete. The moisture sensitivity level (MSL) stands at 1, implying unlimited exposure to moisture. The technology used in this product is SDRAM - Mobile LPDDR3. The voltage supply range is between 1.14V to 1.95V. It is a volatile memory type that operates at a clock frequency of 800MHz. The memory interface is set to parallel.
EDF8164A3MD-GD-F-R Applications
There are a lot of Micron Technology Inc.
EDF8164A3MD-GD-F-R Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
A Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tape & Reel (TR) case as well. On the chip, there is an 8Gb 128M x 64 memory, which is the size of the chip's memory. There is a DRAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -30°C~85°C TC, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 1.14V~1.95V volts. A clock frequency rotation within 800MHz is used for the ic memory chip to rotate data.
EDF8164A3MD-GD-F-R Features
This product is manufactured by Micron Technology Inc., is an electronic component of memory type. The operating temperature range for this component is -30°C to 85°C with a temperature coefficient of reference (TC). It comes in a packaging format known as Tape & Reel (TR). As per the part status, it has been marked as obsolete. The moisture sensitivity level (MSL) stands at 1, implying unlimited exposure to moisture. The technology used in this product is SDRAM - Mobile LPDDR3. The voltage supply range is between 1.14V to 1.95V. It is a volatile memory type that operates at a clock frequency of 800MHz. The memory interface is set to parallel.
EDF8164A3MD-GD-F-R Applications
There are a lot of Micron Technology Inc.
EDF8164A3MD-GD-F-R Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
EDF8164A3MD-GD-F-R More Descriptions
IC FLASH 512MBIT 108MHZ 24TBGA
IC DRAM 8G PARALLEL 800MHZ FBGA
LPDDR3 8G 128MX64 FBGA DDP
IC DRAM 8G PARALLEL 800MHZ FBGA
LPDDR3 8G 128MX64 FBGA DDP
The three parts on the right have similar specifications to EDF8164A3MD-GD-F-R.
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ImagePart NumberManufacturerOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of TerminationsECCN CodeAdditional FeatureTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthRoHS StatusView Compare
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EDF8164A3MD-GD-F-R-30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile800MHzDRAMParallel-------------------------
-
-30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile800MHzDRAMParallel------------------------
-
-30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile800MHzDRAMParallel------------------------
-
-30°C~85°C TCTape & Reel (TR)Obsolete3 (168 Hours)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile933MHzDRAMParallel9 WeeksSurface Mount216-WFBGAYES216EAR99AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYBOTTOM11.2V0.4mmS-PBGA-B2161.3V1.14V1SYNCHRONOUS128MX64648589934592 bitSINGLE BANK PAGE BURST0.7mm12mm12mmROHS3 Compliant
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