Micron Technology Inc. EDF8164A3MD-GD-F-R TR
- Part Number:
- EDF8164A3MD-GD-F-R TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7102381-EDF8164A3MD-GD-F-R TR
- Description:
- Memory IC
- Datasheet:
- EDF8164A3MD-GD-F-R TR
Micron Technology Inc. EDF8164A3MD-GD-F-R TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDF8164A3MD-GD-F-R TR.
- Operating Temperature-30°C~85°C TC
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySDRAM - Mobile LPDDR3
- Voltage - Supply1.14V~1.95V
- Memory Size8Gb 128M x 64
- Memory TypeVolatile
- Clock Frequency800MHz
- Memory FormatDRAM
- Memory InterfaceParallel
EDF8164A3MD-GD-F-R TR Overview
There is a memory type Volatile for this type of device. The case comes in the Tape & Reel (TR) style. This chip has an 8Gb 128M x 64 size of memory on it, so a lot of data can be stored on it. Memory data is stored in DRAM-format, which is common in mainstream devices. -30°C~85°C TC is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 1.14V~1.95V can be applied to it. During the rotation of the clock, the ic memory chip is set as 800MHz.
EDF8164A3MD-GD-F-R TR Features
This product is manufactured by Micron Technology Inc., is a high-quality Memory electronic component designed for optimal performance and reliability. It comes in a convenient Tape & Reel (TR) packaging format that makes it easy to handle and store. The part status is currently marked as obsolete, but it still offers unparalleled quality at its best. With a moisture sensitivity level (MSL) of just 1 (unlimited), this component is built to withstand harsh environments with ease. The technology used in this product is state-of-the-art SDRAM - Mobile LPDDR3, which ensures top-notch speed and efficiency. The voltage supply range is 1.14V~1.95V, providing ample power for stable operation. The memory size stands at a impressive 8Gb 128M x 64, making it perfect for handling large amounts of data. The memory type is volatile, and the clock frequency is set at a competitive 800MHz. Additionally, the memory interface features parallel connectivity, enhancing overall system performance.
EDF8164A3MD-GD-F-R TR Applications
There are a lot of Micron Technology Inc.
EDF8164A3MD-GD-F-R TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
There is a memory type Volatile for this type of device. The case comes in the Tape & Reel (TR) style. This chip has an 8Gb 128M x 64 size of memory on it, so a lot of data can be stored on it. Memory data is stored in DRAM-format, which is common in mainstream devices. -30°C~85°C TC is an extended operating temperature range, making this device ideal for demanding applications. A supply voltage of 1.14V~1.95V can be applied to it. During the rotation of the clock, the ic memory chip is set as 800MHz.
EDF8164A3MD-GD-F-R TR Features
This product is manufactured by Micron Technology Inc., is a high-quality Memory electronic component designed for optimal performance and reliability. It comes in a convenient Tape & Reel (TR) packaging format that makes it easy to handle and store. The part status is currently marked as obsolete, but it still offers unparalleled quality at its best. With a moisture sensitivity level (MSL) of just 1 (unlimited), this component is built to withstand harsh environments with ease. The technology used in this product is state-of-the-art SDRAM - Mobile LPDDR3, which ensures top-notch speed and efficiency. The voltage supply range is 1.14V~1.95V, providing ample power for stable operation. The memory size stands at a impressive 8Gb 128M x 64, making it perfect for handling large amounts of data. The memory type is volatile, and the clock frequency is set at a competitive 800MHz. Additionally, the memory interface features parallel connectivity, enhancing overall system performance.
EDF8164A3MD-GD-F-R TR Applications
There are a lot of Micron Technology Inc.
EDF8164A3MD-GD-F-R TR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
EDF8164A3MD-GD-F-R TR More Descriptions
IC DRAM 8G PARALLEL 800MHZ FBGA
IC DRAM 256M PARALLEL 90VFBGA
IC DRAM 256M PARALLEL 90VFBGA
The three parts on the right have similar specifications to EDF8164A3MD-GD-F-R TR.
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ImagePart NumberManufacturerOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of TerminationsECCN CodeAdditional FeatureTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthRoHS StatusView Compare
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EDF8164A3MD-GD-F-R TR-30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile800MHzDRAMParallel-------------------------
-
-30°C~85°C TCTape & Reel (TR)Obsolete3 (168 Hours)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile933MHzDRAMParallel9 WeeksSurface Mount216-WFBGAYES216EAR99AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYBOTTOM11.2V0.4mmS-PBGA-B2161.3V1.14V1SYNCHRONOUS128MX64648589934592 bitSINGLE BANK PAGE BURST0.7mm12mm12mmROHS3 Compliant
-
-30°C~85°C TCTape & Reel (TR)Obsolete3 (168 Hours)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 256M x 32Volatile800MHzDRAMParallel-----------------------ROHS3 Compliant
-
-30°C~85°C TCTrayObsolete3 (168 Hours)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 256M x 32Volatile800MHzDRAMParallel-----------------------ROHS3 Compliant
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