Micron Technology Inc. EDF8164A3MC-GD-F-R
- Part Number:
- EDF8164A3MC-GD-F-R
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7102217-EDF8164A3MC-GD-F-R
- Description:
- Memory IC
- Datasheet:
- EDF8164A3MC-GD-F-R
Micron Technology Inc. EDF8164A3MC-GD-F-R technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. EDF8164A3MC-GD-F-R.
- Operating Temperature-30°C~85°C TC
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySDRAM - Mobile LPDDR3
- Voltage - Supply1.14V~1.95V
- Memory Size8Gb 128M x 64
- Memory TypeVolatile
- Clock Frequency800MHz
- Memory FormatDRAM
- Memory InterfaceParallel
EDF8164A3MC-GD-F-R Overview
Its memory type can be classified as Volatile. It comes in a Tape & Reel (TR). The memory size of the chip is 8Gb 128M x 64 Mb. This device utilizes a DRAM format memory which is of mainstream design. With an extended designed operating temperature of -30°C~85°C TC, this device is capable of lots of demanding applications. It is supplied votage within 1.14V~1.95V. The memory has a clock frequency rotation within 800MHz.
EDF8164A3MC-GD-F-R Features
The Micron Technology Inc. product is an obsolete Memory electronic component categorized under Memory technology. It operates at temperatures ranging from -30°C to 85°C and comes in a Tape & Reel (TR) packaging. This product is no longer available. The technology employed is SDRAM - Mobile LPDDR3, with a voltage supply of 1.14V~1.95V. The memory size stands at 8Gb 128M x 64, making it volatile in nature. The clock frequency is set at 800MHz, and the memory interface is of the Parallel variety.
EDF8164A3MC-GD-F-R Applications
There are a lot of Micron Technology Inc.
EDF8164A3MC-GD-F-R Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Volatile. It comes in a Tape & Reel (TR). The memory size of the chip is 8Gb 128M x 64 Mb. This device utilizes a DRAM format memory which is of mainstream design. With an extended designed operating temperature of -30°C~85°C TC, this device is capable of lots of demanding applications. It is supplied votage within 1.14V~1.95V. The memory has a clock frequency rotation within 800MHz.
EDF8164A3MC-GD-F-R Features
The Micron Technology Inc. product is an obsolete Memory electronic component categorized under Memory technology. It operates at temperatures ranging from -30°C to 85°C and comes in a Tape & Reel (TR) packaging. This product is no longer available. The technology employed is SDRAM - Mobile LPDDR3, with a voltage supply of 1.14V~1.95V. The memory size stands at 8Gb 128M x 64, making it volatile in nature. The clock frequency is set at 800MHz, and the memory interface is of the Parallel variety.
EDF8164A3MC-GD-F-R Applications
There are a lot of Micron Technology Inc.
EDF8164A3MC-GD-F-R Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
EDF8164A3MC-GD-F-R More Descriptions
IC FLASH 128M SPI 133MHZ 16SOP2
IC DRAM 8G PARALLEL 800MHZ FBGA
LPDDR3 8G 128MX64 FBGA DDP
IC DRAM 8G PARALLEL 800MHZ FBGA
LPDDR3 8G 128MX64 FBGA DDP
The three parts on the right have similar specifications to EDF8164A3MC-GD-F-R.
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ImagePart NumberManufacturerOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of TerminationsECCN CodeAdditional FeatureTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeOrganizationMemory WidthMemory DensityAccess ModeHeight Seated (Max)LengthWidthRoHS StatusView Compare
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EDF8164A3MC-GD-F-R-30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile800MHzDRAMParallel-------------------------
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-30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile800MHzDRAMParallel------------------------
-
-30°C~85°C TCTape & Reel (TR)Obsolete1 (Unlimited)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile800MHzDRAMParallel------------------------
-
-30°C~85°C TCTape & Reel (TR)Obsolete3 (168 Hours)SDRAM - Mobile LPDDR31.14V~1.95V8Gb 128M x 64Volatile933MHzDRAMParallel9 WeeksSurface Mount216-WFBGAYES216EAR99AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLYBOTTOM11.2V0.4mmS-PBGA-B2161.3V1.14V1SYNCHRONOUS128MX64648589934592 bitSINGLE BANK PAGE BURST0.7mm12mm12mmROHS3 Compliant
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