Cypress Semiconductor Corp CY14B116N-BA25XI

Name: CY14B116N-BA25XI
Brand: Cypress Semiconductor Corp
SKU: 7374845-CY14B116N-BA25XI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY14B116N-BA25XI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 7374845-CY14B116N-BA25XI

Description:: Memory IC 18mm mm

ECAD Model:

Datasheet:: CY14B116N-BA25XI

Specifications

Cypress Semiconductor Corp CY14B116N-BA25XI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B116N-BA25XI.

Factory Lead Time
26 Weeks
Mounting Type
Surface Mount
Package / Case
60-LFBGA
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
60
ECCN Code
3A991.A.2
HTS Code
8542.90.00.00
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.75mm
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PBGA-B60
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
16Mb 1M x 16
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Memory Format
NVSRAM
Memory Interface
Parallel
Organization
1MX16
Memory Width
16
Write Cycle Time - Word, Page
25ns
Memory Density
16777216 bit
Access Time (Max)
25 ns
Length
18mm
Height Seated (Max)
1.2mm
Width
10mm
RoHS Status
ROHS3 Compliant

Description

CY14B116N-BA25XI Overview
As far as memory types are concerned, Non-Volatile is considered to be its memory type. In addition, memory ics is available in a Tray case as well. In the case of 60-LFBGA, it is embedded within the case. A memory chip with a capacity of 16Mb 1M x 16 is used on this device. There is a mainstream memory format used by this device, which is called NVSRAM-format memory. This device has an extended operating temperature range of -40°C~85°C TA, so it's perfect for a wide range of demanding applications. It is capable of handling a voltage supply of 2.7V~3.6V. As far as the mounting type is concerned, Surface Mount is recommended. On the chip, there are 60 terminations that are planted. The part supports at least 1 functions to ensure a comprehensive working process. In order to function properly, this ic memory chip should be powered by a voltage of 3V.

CY14B116N-BA25XI Features
Package / Case: 60-LFBGA

CY14B116N-BA25XI Applications
There are a lot of Cypress Semiconductor Corp
CY14B116N-BA25XI Memory applications.

servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM

CY14B116N-BA25XI More Descriptions

NVSRAM (Non-Volatile SRAM) Memory IC 16Mb (1M x 16) Parallel 25 ns 60-FBGA (10x18)
Active BOTTOM Non-Volatile ASYNCHRONOUS ic memory -40C~85C TA 2.7V 16777216bit 10mm
Nonvolatile SRAM, 16384 Kb Density, BGA-60, RoHSCypress Semiconductor SCT
NON-VOLATILE SRAM, 1MX16, 25NS, CMOS, PBGA60
2.7V~3.6V 16Mbit LFBGA-60 SRAM ROHS
IC NVSRAM 16MBIT PARALLEL 60FBGA
Product Description Demo for Development.
DUAL-PORT SRAM, 64KX16, 20NS, CM

Product Comparison

The three parts on the right have similar specifications to CY14B116N-BA25XI.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Operating Mode

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Memory Density

Access Time (Max)

Length

Height Seated (Max)

Width

RoHS Status

Supplier Device Package

Access Time

Published

JESD-609 Code

Terminal Finish

Subcategory

Base Part Number

Qualification Status

Power Supplies

Supply Current-Max

Standby Current-Max

View Compare
CY14B116N-BA25XI

Cypress Semiconductor Corp

26 Weeks

Surface Mount

60-LFBGA

YES

-40°C~85°C TA

Tray

Active

3 (168 Hours)

60

3A991.A.2

8542.90.00.00

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

0.75mm

NOT SPECIFIED

R-PBGA-B60

3.6V

2.7V

16Mb 1M x 16

Non-Volatile

ASYNCHRONOUS

NVSRAM

Parallel

1MX16

16

25ns

16777216 bit

25 ns

18mm

1.2mm

10mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
CY14B116N-BA25XIT

Cypress Semiconductor Corp

26 Weeks

Surface Mount

60-LFBGA

YES

-40°C~85°C TA

Tape & Reel (TR)

Active

3 (168 Hours)

60

3A991.A.2

8542.90.00.00

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

NOT SPECIFIED

1

3V

0.75mm

NOT SPECIFIED

R-PBGA-B60

3.6V

2.7V

16Mb 1M x 16

Non-Volatile

ASYNCHRONOUS

NVSRAM

Parallel

1MX16

16

25ns

16777216 bit

25 ns

18mm

1.2mm

10mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

CY14B116N-BA25XI vs CY14B116N-BA25XIT
CY14B101L-SP45XC

ON Semiconductor

-

Surface Mount

48-BSSOP (0.295, 7.50mm Width)

-

0°C~70°C TA

Tube

Obsolete

3 (168 Hours)

-

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

-

-

-

-

-

-

-

-

-

1Mb 128K x 8

Non-Volatile

-

NVSRAM

Parallel

-

-

45ns

-

-

-

-

-

ROHS3 Compliant

48-SSOP

45ns

-

-

-

-

-

-

-

-

-

CY14B116N-BA25XI vs CY14B101L-SP45XC
CY14B104NA-BA25IT

Cypress Semiconductor Corp

11 Weeks

Surface Mount

48-TFBGA

YES

-40°C~85°C TA

Tape & Reel (TR)

Last Time Buy

3 (168 Hours)

48

3A991.B.2.A

8542.32.00.41

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

260

1

3V

0.75mm

30

R-PBGA-B48

3.6V

2.7V

4Mb 256K x 16

Non-Volatile

ASYNCHRONOUS

NVSRAM

Parallel

256KX16

16

25ns

4194304 bit

25 ns

10mm

1.2mm

6mm

Non-RoHS Compliant

-

-

2011

e1

Tin/Silver/Copper (Sn/Ag/Cu)

SRAMs

CY14B104

Not Qualified

3/3.3V

0.07mA

0.005A

CY14B116N-BA25XI vs CY14B104NA-BA25IT