Cypress Semiconductor Corp CY14B104NA-BA25IT

Name: CY14B104NA-BA25IT
Brand: Cypress Semiconductor Corp
SKU: 7373868-CY14B104NA-BA25IT
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY14B104NA-BA25IT

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 7373868-CY14B104NA-BA25IT

Description:: 3/3.3V V Memory IC CY14B104 10mm mm

ECAD Model:

Datasheet:: CY14B104NA-BA25IT

Specifications

Cypress Semiconductor Corp CY14B104NA-BA25IT technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B104NA-BA25IT.

Factory Lead Time
11 Weeks
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e1
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.2.A
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8542.32.00.41
Subcategory
SRAMs
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
2.7V~3.6V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.75mm
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
CY14B104
JESD-30 Code
R-PBGA-B48
Qualification Status
Not Qualified
Supply Voltage-Max (Vsup)
3.6V
Power Supplies
3/3.3V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
4Mb 256K x 16
Memory Type
Non-Volatile
Operating Mode
ASYNCHRONOUS
Supply Current-Max
0.07mA
Memory Format
NVSRAM
Memory Interface
Parallel
Organization
256KX16
Memory Width
16
Write Cycle Time - Word, Page
25ns
Standby Current-Max
0.005A
Memory Density
4194304 bit
Access Time (Max)
25 ns
Length
10mm
Height Seated (Max)
1.2mm
Width
6mm
RoHS Status
Non-RoHS Compliant

Description

CY14B104NA-BA25IT Overview
As far as its memory type goes, it falls into the Non-Volatile category. You can get memory ics in a Tape & Reel (TR) case. 48-TFBGA case encloses it. There is 4Mb 256K x 16 of memory on the chip. The device uses a mainstream NVSRAM-format memory. Suitable for use in a wide range of demanding applications, this device offers an extended operating temperature range of -40°C~85°C TA. There is a voltage range of 2.7V~3.6V for the supply voltage. It is recommended that the mounting type be Surface Mount. There are 48 terminations on the chip. There are 1 functions supported by this part as part of the comprehensive working process. The memory device is designed to be supplied with an 3V volt power supply in order to operate properly. When choosing similar parts, CY14B104 is frequently referred to as the device's base part number. As for the power supply, this memory chip only needs 3/3.3V . The device is able to run from a max supply current of 0.07mA , so it can be used in any environment. There is a common misconception that this component is a type of SRAMs.

CY14B104NA-BA25IT Features
Package / Case: 48-TFBGA

CY14B104NA-BA25IT Applications
There are a lot of Cypress Semiconductor Corp
CY14B104NA-BA25IT Memory applications.

multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory

CY14B104NA-BA25IT More Descriptions

NVRAM NVSRAM Parallel 4Mbit 3V 48-Pin FBGA T/R
IC NVSRAM 4MBIT PARALLEL 48FBGA
NVRAM NVSRAM Parallel 4M-Bit 3V T/R

Product Comparison

The three parts on the right have similar specifications to CY14B104NA-BA25IT.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Qualification Status

Supply Voltage-Max (Vsup)

Power Supplies

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Operating Mode

Supply Current-Max

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Standby Current-Max

Memory Density

Access Time (Max)

Length

Height Seated (Max)

Width

RoHS Status

Supplier Device Package

Access Time

Reach Compliance Code

Pin Count

View Compare
CY14B104NA-BA25IT

Cypress Semiconductor Corp

11 Weeks

Surface Mount

48-TFBGA

YES

-40°C~85°C TA

Tape & Reel (TR)

2011

e1

Last Time Buy

3 (168 Hours)

48

3A991.B.2.A

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

BOTTOM

260

1

3V

0.75mm

30

CY14B104

R-PBGA-B48

Not Qualified

3.6V

3/3.3V

2.7V

4Mb 256K x 16

Non-Volatile

ASYNCHRONOUS

0.07mA

NVSRAM

Parallel

256KX16

16

25ns

0.005A

4194304 bit

25 ns

10mm

1.2mm

6mm

Non-RoHS Compliant

-

-

-

-

-
CY14B101L-SP45XC

ON Semiconductor

-

Surface Mount

48-BSSOP (0.295, 7.50mm Width)

-

0°C~70°C TA

Tube

-

-

Obsolete

3 (168 Hours)

-

-

-

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

-

-

-

-

-

-

-

-

-

-

-

-

1Mb 128K x 8

Non-Volatile

-

-

NVSRAM

Parallel

-

-

45ns

-

-

-

-

-

-

ROHS3 Compliant

48-SSOP

45ns

-

-

CY14B104NA-BA25IT vs CY14B101L-SP45XC
CY14B104L-ZS45XI

ON Semiconductor

-

Surface Mount

44-TSOP (0.400, 10.16mm Width)

YES

-40°C~85°C TA

Tube

-

-

Obsolete

3 (168 Hours)

44

-

-

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

DUAL

-

1

3V

0.8mm

-

-

R-PDSO-G44

COMMERCIAL

3.6V

-

2.7V

4Mb 512K x 8

Non-Volatile

ASYNCHRONOUS

-

NVSRAM

Parallel

512KX8

8

45ns

-

4194304 bit

45 ns

18.415mm

1.194mm

10.16mm

ROHS3 Compliant

-

-

unknown

44

CY14B104NA-BA25IT vs CY14B104L-ZS45XI
CY14B104L-BA45XC

ON Semiconductor

-

Surface Mount

48-TFBGA

-

0°C~70°C TA

Tube

-

-

Obsolete

3 (168 Hours)

-

-

-

-

-

NVSRAM (Non-Volatile SRAM)

2.7V~3.6V

-

-

-

-

-

-

-

-

-

-

-

-

4Mb 512K x 8

Non-Volatile

-

-

NVSRAM

Parallel

-

-

45ns

-

-

-

-

-

-

Non-RoHS Compliant

48-FBGA (6x10)

45ns

-

-

CY14B104NA-BA25IT vs CY14B104L-BA45XC