Cypress Semiconductor Corp CY14B116N-BA25XIT
- Part Number:
- CY14B116N-BA25XIT
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7374841-CY14B116N-BA25XIT
- Description:
- Memory IC 18mm mm
- Datasheet:
- CY14B116N-BA25XIT
Cypress Semiconductor Corp CY14B116N-BA25XIT technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY14B116N-BA25XIT.
- Factory Lead Time26 Weeks
- Mounting TypeSurface Mount
- Package / Case60-LFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN Code3A991.A.2
- HTS Code8542.90.00.00
- TechnologyNVSRAM (Non-Volatile SRAM)
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B60
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size16Mb 1M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Memory FormatNVSRAM
- Memory InterfaceParallel
- Organization1MX16
- Memory Width16
- Write Cycle Time - Word, Page25ns
- Memory Density16777216 bit
- Access Time (Max)25 ns
- Length18mm
- Height Seated (Max)1.2mm
- Width10mm
- RoHS StatusROHS3 Compliant
CY14B116N-BA25XIT Overview
In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. An embedded 60-LFBGA case surrounds memory ics. It is estimated that the memory size on the chip is 16Mb 1M x 16. As with most mainstream devices, this one uses NVSRAM-format memory. Due to its wide temperature range of -40°C~85°C TA, this device is well suited to a wide range of applications that require high performance. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. It is planted on the chip with 60 terminations. It supports up to 1 functions for comprehensive operation. There is a requirement for 3V to be supplied to this ic memory chip in order to operate.
CY14B116N-BA25XIT Features
Package / Case: 60-LFBGA
CY14B116N-BA25XIT Applications
There are a lot of Cypress Semiconductor Corp
CY14B116N-BA25XIT Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. An embedded 60-LFBGA case surrounds memory ics. It is estimated that the memory size on the chip is 16Mb 1M x 16. As with most mainstream devices, this one uses NVSRAM-format memory. Due to its wide temperature range of -40°C~85°C TA, this device is well suited to a wide range of applications that require high performance. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. It is planted on the chip with 60 terminations. It supports up to 1 functions for comprehensive operation. There is a requirement for 3V to be supplied to this ic memory chip in order to operate.
CY14B116N-BA25XIT Features
Package / Case: 60-LFBGA
CY14B116N-BA25XIT Applications
There are a lot of Cypress Semiconductor Corp
CY14B116N-BA25XIT Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
CY14B116N-BA25XIT More Descriptions
Nonvolatile SRAM, 16384 Kb Density, BGA-60, RoHSCypress Semiconductor SCT
2.7V~3.6V 16Mbit LFBGA-60 SRAM ROHS
IC NVSRAM 16MBIT PARALLEL 60FBGA
2.7V~3.6V 16Mbit LFBGA-60 SRAM ROHS
IC NVSRAM 16MBIT PARALLEL 60FBGA
The three parts on the right have similar specifications to CY14B116N-BA25XIT.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthRoHS StatusMountNumber of PinsPublishedJESD-609 CodeTerminal FinishSubcategoryReach Compliance CodeBase Part NumberPin CountQualification StatusOperating Supply VoltageNominal Supply CurrentData Bus WidthDensityStandby Current-MaxWord SizeLead FreePbfree CodeSupplier Device PackageAccess TimeView Compare
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CY14B116N-BA25XIT26 WeeksSurface Mount60-LFBGAYES-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)603A991.A.28542.90.00.00NVSRAM (Non-Volatile SRAM)2.7V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIEDR-PBGA-B603.6V2.7V16Mb 1M x 16Non-VolatileASYNCHRONOUSNVSRAMParallel1MX161625ns16777216 bit25 ns18mm1.2mm10mmROHS3 Compliant---------------------
-
-Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATubeObsolete3 (168 Hours)443A991.B.2.A8542.32.00.41NVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL26013V0.8mm20-3.6V2.7V4Mb 512K x 8Non-VolatileASYNCHRONOUSNVSRAMParallel512KX8845ns-45 ns18.415mm1.194mm-ROHS3 CompliantSurface Mount442007e4Nickel/Palladium/Gold (Ni/Pd/Au)SRAMsunknownCY14B10444Not Qualified3.3V52mA8b4 Mb0.005A8bLead Free---
-
-Surface Mount44-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATubeObsolete3 (168 Hours)44--NVSRAM (Non-Volatile SRAM)2.7V~3.6VDUAL26013V0.8mmNOT SPECIFIEDR-PDSO-G443.6V2.7V4Mb 512K x 8Non-VolatileASYNCHRONOUSNVSRAMParallel512KX8825ns4194304 bit25 ns18.415mm1.194mm10.16mmROHS3 Compliant---e4NICKEL PALLADIUM GOLD-unknown-44COMMERCIAL-------yes--
-
-Surface Mount48-TFBGA-0°C~70°C TATubeObsolete3 (168 Hours)---NVSRAM (Non-Volatile SRAM)2.7V~3.6V---------4Mb 512K x 8Non-Volatile-NVSRAMParallel--45ns-----Non-RoHS Compliant------------------48-FBGA (6x10)45ns
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