Diodes Incorporated ZXTP25020DFLTA
- Part Number:
- ZXTP25020DFLTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464835-ZXTP25020DFLTA
- Description:
- TRANS PNP 20V 1.5A SOT23-3
- ECAD Model:
-
- Datasheet:
- ZXTP25020DFLTA
Diodes Incorporated ZXTP25020DFLTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTP25020DFLTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency290MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTP25020D
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Gain Bandwidth Product290MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA 2V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic260mV @ 400mA, 4A
- Collector Emitter Breakdown Voltage20V
- Transition Frequency290MHz
- Collector Emitter Saturation Voltage260mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)25V
- Emitter Base Voltage (VEBO)7V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTP25020DFLTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 260mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 290MHz.As a result, it can handle voltages as low as 20V volts.The maximum collector current is 1.5A volts.
ZXTP25020DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 290MHz
ZXTP25020DFLTA Applications
There are a lot of Diodes Incorporated
ZXTP25020DFLTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 260mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 290MHz.As a result, it can handle voltages as low as 20V volts.The maximum collector current is 1.5A volts.
ZXTP25020DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 290MHz
ZXTP25020DFLTA Applications
There are a lot of Diodes Incorporated
ZXTP25020DFLTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTP25020DFLTA More Descriptions
ZXTP25020DFL Series PNP 20 V 1.5 A Medium Power Transistor SMT - SOT-23-3
Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 20V 1.5A 350mW 3-Pin SOT-23 T/R
Transistor PNP 20V 1.5A SOT23 | Diodes Inc ZXTP25020DFLTA
PNP TRANSISTOR 20V 1,5A SOT23F
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:290MHz; Power Dissipation Pd:350mW; DC Collector Current:4A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:195mV; Continuous Collector Current Ic Max:1.5A; Current Ib:500mA; Current Ic Continuous a Max:4A; Current Ic hFE:1.5A; Gain Bandwidth ft Typ:290MHz; Hfe Min:160; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Turn Off Time:32.7ns; Turn On Time:16.3ns; Voltage Vcbo:25V
Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 20V 1.5A 350mW 3-Pin SOT-23 T/R
Transistor PNP 20V 1.5A SOT23 | Diodes Inc ZXTP25020DFLTA
PNP TRANSISTOR 20V 1,5A SOT23F
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:290MHz; Power Dissipation Pd:350mW; DC Collector Current:4A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:195mV; Continuous Collector Current Ic Max:1.5A; Current Ib:500mA; Current Ic Continuous a Max:4A; Current Ic hFE:1.5A; Gain Bandwidth ft Typ:290MHz; Hfe Min:160; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Turn Off Time:32.7ns; Turn On Time:16.3ns; Voltage Vcbo:25V
The three parts on the right have similar specifications to ZXTP25020DFLTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCCurrent RatingCase ConnectionTransistor ApplicationhFE MinContinuous Collector CurrentSubcategoryPower - MaxMax FrequencyView Compare
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ZXTP25020DFLTA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)350mWDUALGULL WING260290MHz40ZXTP25020D31Single350mW290MHzPNPPNP20V1.5A300 @ 10mA 2V50nA ICBO260mV @ 400mA, 4A20V290MHz260mV20V25V7V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------- -
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)3WDUALGULL WING260110MHz40ZXTP200841Single3W110MHzPNPPNP30V5.5A100 @ 1A 1V20nA ICBO210mV @ 500mA, 5.5A30V110MHz-210mV30V50V7V1.65mm6.7mm3.7mm-NoROHS3 CompliantLead Free-30V-5.5ACOLLECTORSWITCHING100-5.5A---
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)5.3WDUALGULL WING260-40ZXTP19020D41Single-176MHzPNPPNP20V8A300 @ 100mA 2V50nA ICBO275mV @ 800mA, 8A20V176MHz275mV20V25V7V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--COLLECTORSWITCHING300-Other Transistors3W176MHz
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed330mWDUALGULL WING260100MHz40ZXTP540131Single330mW100MHzPNPPNP150V600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V100MHz-500mV150V160V5V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---AMPLIFIER--Other Transistors--
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