Diodes Incorporated ZUMT717TA
- Part Number:
- ZUMT717TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464709-ZUMT717TA
- Description:
- TRANS PNP 12V 1.25A SC70-3
- Datasheet:
- ZUMT717TA
Diodes Incorporated ZUMT717TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZUMT717TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-12V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.25A
- Frequency220MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZUMT717
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product220MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current1.25A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA 2V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic240mV @ 100mA, 1.25A
- Collector Emitter Breakdown Voltage12V
- Transition Frequency220MHz
- Collector Emitter Saturation Voltage-185mV
- Max Breakdown Voltage12V
- Collector Base Voltage (VCBO)12V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-1.25A
- Height1mm
- Length2.2mm
- Width1.26mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZUMT717TA Overview
DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -185mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 240mV @ 100mA, 1.25A.Single BJT transistor is essential to maintain the continuous collector voltage at -1.25A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1.25A current rating.As a result, the part has a transition frequency of 220MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 1.25A volts.
ZUMT717TA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 240mV @ 100mA, 1.25A
the emitter base voltage is kept at 5V
the current rating of this device is -1.25A
a transition frequency of 220MHz
ZUMT717TA Applications
There are a lot of Diodes Incorporated
ZUMT717TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -185mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 240mV @ 100mA, 1.25A.Single BJT transistor is essential to maintain the continuous collector voltage at -1.25A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1.25A current rating.As a result, the part has a transition frequency of 220MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 1.25A volts.
ZUMT717TA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 240mV @ 100mA, 1.25A
the emitter base voltage is kept at 5V
the current rating of this device is -1.25A
a transition frequency of 220MHz
ZUMT717TA Applications
There are a lot of Diodes Incorporated
ZUMT717TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZUMT717TA More Descriptions
Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon
ZUMT717 Series 12 V 1.25 A Surface Mount NPN Silicon Power Transistor - SOT-323
Trans GP BJT PNP 12V 1.25A 500mW 3-Pin SOT-323 T/R
PNP Transistor,1.25A,12V,SOT323 | Diodes Inc ZUMT717TA
ZUMT717 Series 12 V 1.25 A Surface Mount NPN Silicon Power Transistor - SOT-323
Trans GP BJT PNP 12V 1.25A 500mW 3-Pin SOT-323 T/R
PNP Transistor,1.25A,12V,SOT323 | Diodes Inc ZUMT717TA
The three parts on the right have similar specifications to ZUMT717TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxSurface MountReach Compliance CodeJESD-30 CodeQualification StatusConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionhFE MinView Compare
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ZUMT717TA15 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-12V500mWDUALGULL WING260-1.25A220MHz40ZUMT7171Single500mWSWITCHING220MHzPNPPNP12V1.25A200 @ 500mA 2V10nA240mV @ 100mA, 1.25A12V220MHz-185mV12V12V5V-1.25A1mm2.2mm1.26mmNo SVHCNoROHS3 CompliantLead Free-----------
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15 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mg--55°C~150°C TJTape & Reel (TR)2006e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)-60V500mW----1A--ZUMT591-Single--150MHz-PNP60V1A100 @ 500mA 5V100nA600mV @ 100mA, 1A60V--600mV60V80V5V-1mm2.2mm1.26mmNo SVHCNoROHS3 CompliantLead Free500mW---------
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--Surface MountSC-70, SOT-323--SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN--DUALGULL WING260--40ZUMT7171--SWITCHING-PNPPNP--200 @ 500mA 2V10nA240mV @ 100mA, 1.25A-220MHz------------500mWYEScompliantR-PDSO-G3Not QualifiedSINGLE12V1.25A220MHz-
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15 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-40V500mWDUALGULL WING260-1A220MHz40ZUMT7201Single500mWSWITCHING220MHzPNPPNP40V750mA90 @ 500mA 2V10nA250mV @ 100mA, 750mA40V220MHz250mV40V40V5V-750mA1mm2.2mm1.26mm-NoROHS3 CompliantLead Free---------40
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