Diodes Incorporated ZUMT591TA

ZUMT591TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.

ZUMT591TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A


ZUMT591TA Applications
There are a lot of Diodes Incorporated
ZUMT591TA applications of single BJT transistors.


Inverter
Interface
Driver
Muting