Diodes Incorporated ZTX601
- Part Number:
- ZTX601
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463264-ZTX601
- Description:
- TRANS NPN DARL 160V 1A E-LINE
- ECAD Model:
-
- Datasheet:
- ZTX601
Diodes Incorporated ZTX601 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX601.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC160V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX601
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA 10V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 10mA, 1A
- Collector Emitter Breakdown Voltage160V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage1.1V
- Frequency - Transition250MHz
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)10V
- Continuous Collector Current1A
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX601 Overview
This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 250MHz.The maximum collector current is 1A volts.
ZTX601 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 250MHz
ZTX601 Applications
There are a lot of Diodes Incorporated
ZTX601 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 250MHz.The maximum collector current is 1A volts.
ZTX601 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 250MHz
ZTX601 Applications
There are a lot of Diodes Incorporated
ZTX601 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX601 More Descriptions
ZTX601 Series 160V 1A NPN Silicon Planar Medium Power Darlington Transistor TO92
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
Transistors, Darlington, NPN Darlington Trans 1A 180Vcbo 160Vceo | Diodes Inc ZTX601
Trans Darlington NPN 160V 1A 1000mW 3-Pin E-Line / TRANS NPN DARL 160V 1A E-LINE
Trans, Npn, 160V, 1A, 200Deg C, 1W Rohs Compliant: Yes |Diodes Inc. ZTX601
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
Transistors, Darlington, NPN Darlington Trans 1A 180Vcbo 160Vceo | Diodes Inc ZTX601
Trans Darlington NPN 160V 1A 1000mW 3-Pin E-Line / TRANS NPN DARL 160V 1A E-LINE
Trans, Npn, 160V, 1A, 200Deg C, 1W Rohs Compliant: Yes |Diodes Inc. ZTX601
The three parts on the right have similar specifications to ZTX601.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFrequencyPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeHTS CodeReach Compliance CodeReference StandardJESD-30 CodeQualification StatusView Compare
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ZTX60115 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors160V1WWIRE2601A40ZTX60131NPNSingleNPN - Darlington160V1A2000 @ 500mA 10V10μA1.2V @ 10mA, 1A160V250MHz1.1V250MHz180V10V1A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free----------- -
15 WeeksThrough HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-25V1WWIRE2602A40ZTX64931-SingleNPN25V2A100 @ 1A 2V100nA ICBO500mV @ 200mA, 2A25V150MHz230mV-35V5V2A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free240MHz1WSWITCHING240MHzNPN-----
-
-Through HoleThrough HoleE-Line-3, Formed Leads--SILICON-55°C~200°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-120V1WWIRE2601A40ZTX60531NPNSingleNPN - Darlington1.5V1A2000 @ 1A 5V10μA1.5V @ 1mA, 1A120V150MHz-150MHz140V10V1A-----RoHS CompliantLead Free-1WSWITCHING--8541.29.00.75unknownCECCR-PSIP-W3Not Qualified
-
-Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg--55°C~200°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----12V1W--3A-ZTX688B3--SingleNPN350mV3A500 @ 100mA 2V100nA ICBO350mV @ 20mA, 3A12V-350mV-12V5V3A4.01mm4.77mm2.41mmNo SVHC-RoHS CompliantLead Free---150MHz------
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