Diodes Incorporated ZTX657
- Part Number:
- ZTX657
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3553745-ZTX657
- Description:
- TRANS NPN 300V 0.5A E-LINE
- ECAD Model:
-
- Datasheet:
- ZTX65(6,7)
Diodes Incorporated ZTX657 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX657.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingBulk
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation1W
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency30MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX657
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Gain Bandwidth Product30MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency30MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current500mA
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZTX657 Overview
This device has a DC current gain of 50 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 30MHz.The maximum collector current is 500mA volts.
ZTX657 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
ZTX657 Applications
There are a lot of Diodes Incorporated
ZTX657 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 50 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 30MHz.The maximum collector current is 500mA volts.
ZTX657 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
ZTX657 Applications
There are a lot of Diodes Incorporated
ZTX657 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZTX657 More Descriptions
ZTX657 Series 300 V 0.5 A NPN Silicon Planar Medium Power Transistor - TO-92-3
Trans GP BJT NPN 300V 0.5A Automotive 3-Pin E-Line
TRANSISTOR, NPN, E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 500mA; DC Current Gain hFE: 50hFE; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 500mA; Current Ic @ Vce Sat: 100mA; Current Ic Continuous a Max: 500mA; Current Ic hFE: 100mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 30MHz; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 50; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 200°C; Power Dissipation Ptot Max: 1W; Voltage Vcbo: 300V
Trans GP BJT NPN 300V 0.5A Automotive 3-Pin E-Line
TRANSISTOR, NPN, E-LINE; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 500mA; DC Current Gain hFE: 50hFE; Transistor Case Style: E-Line; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 500mA; Current Ic @ Vce Sat: 100mA; Current Ic Continuous a Max: 500mA; Current Ic hFE: 100mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 30MHz; Gain Bandwidth ft Typ: 30MHz; Hfe Min: 50; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 200°C; Power Dissipation Ptot Max: 1W; Voltage Vcbo: 300V
The three parts on the right have similar specifications to ZTX657.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor ApplicationHTS CodeReach Compliance CodeReference StandardJESD-30 CodeQualification StatusPolarityFrequency - TransitionView Compare
-
ZTX65715 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~200°C TJBulk2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors300V1WWIRE260500mA30MHz40ZTX65731Single1W30MHzNPNNPN300V500mA50 @ 100mA 5V100nA ICBO500mV @ 10mA, 100mA300V30MHz500mV300V5V500mA4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free--------- -
15 WeeksThrough HoleThrough HoleE-Line-3, Formed Leads3453.59237mgSILICON-55°C~200°C TJTape & Box (TB)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-25V1WWIRE2602A240MHz40ZTX64931Single1W240MHzNPNNPN25V2A100 @ 1A 2V100nA ICBO500mV @ 200mA, 2A25V150MHz230mV35V5V2A4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead FreeSWITCHING-------
-
-Through HoleThrough HoleE-Line-3, Formed Leads--SILICON-55°C~200°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-120V1WWIRE2601A-40ZTX60531Single1W--NPN - Darlington1.5V1A2000 @ 1A 5V10μA1.5V @ 1mA, 1A120V150MHz-140V10V1A-----RoHS CompliantLead FreeSWITCHING8541.29.00.75unknownCECCR-PSIP-W3Not QualifiedNPN150MHz
-
-Through HoleThrough HoleE-Line-3, Formed Leads-453.59237mg--55°C~200°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----180V1W--500mA--ZTX696B3-Single-70MHz-NPN250mV500mA150 @ 200mA 5V100nA ICBO250mV @ 5mA, 200mA180V-250mV180V5V500mA4.01mm4.77mm2.41mmNo SVHC-RoHS CompliantLead Free--unknown-----
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