Diodes Incorporated ZTX458STOA
- Part Number:
- ZTX458STOA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2846851-ZTX458STOA
- Description:
- TRANS NPN 400V 0.3A E-LINE
- ECAD Model:
-
- Datasheet:
- ZTX458STOA
Diodes Incorporated ZTX458STOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZTX458STOA.
- Mounting TypeThrough Hole
- Package / CaseE-Line-3, Formed Leads
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~200°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZTX458
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 6mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)400V
- Current - Collector (Ic) (Max)300mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
ZTX458STOA Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.50MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 400V.
ZTX458STOA Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 500mV @ 6mA, 50mA
a transition frequency of 50MHz
ZTX458STOA Applications
There are a lot of Diodes Incorporated
ZTX458STOA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.50MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 400V.
ZTX458STOA Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 500mV @ 6mA, 50mA
a transition frequency of 50MHz
ZTX458STOA Applications
There are a lot of Diodes Incorporated
ZTX458STOA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to ZTX458STOA.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionMountWeightVoltage - Rated DCMax Power DissipationCurrent RatingElement ConfigurationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthRoHS StatusLead FreeCollector Emitter Saturation VoltageFactory Lead TimeNumber of PinsPbfree CodeReference StandardPolarityREACH SVHCRadiation HardeningView Compare
-
ZTX458STOAThrough HoleE-Line-3, Formed LeadsNOSILICON-55°C~200°C TJTape & Reel (TR)2006e3Obsolete1 (Unlimited)3EAR99MATTE TIN8541.29.00.75SINGLEWIRE260compliant40ZTX4583R-PSIP-W3Not Qualified1SINGLE1WSWITCHINGNPNNPN100 @ 50mA 10V100nA500mV @ 6mA, 50mA400V300mA50MHz50MHz--------------------------- -
Through HoleE-Line-3, Formed Leads-SILICON-55°C~200°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN8541.29.00.75-WIRE260-40ZTX4533R-PSIP-W3Not Qualified1--SWITCHINGNPNNPN40 @ 150mA 10V100nA ICBO700mV @ 15mA, 150mA--150MHz-Through Hole453.59237mg100V1W1ASingle150MHz700mV1A100V120V5V1A4.01mm4.77mm2.41mmRoHS CompliantLead Free--------
-
Through HoleE-Line-3, Formed Leads---55°C~200°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-------unknown-ZTX4553-------NPN100 @ 150mA 10V100nA ICBO700mV @ 15mA, 150mA----Through Hole453.59237mg140V1W1ASingle100MHz700mV1A140V160V5V1A4.01mm4.77mm2.41mmRoHS CompliantLead Free700mV-------
-
Through HoleE-Line-3, Formed Leads-SILICON-55°C~175°C TJTape & Box (TB)2012e3Active1 (Unlimited)3-Matte Tin (Sn)8541.21.00.95-WIRE260-40ZTX4153--1--SWITCHING-NPN - Avalanche Mode25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA--40MHz-Through Hole453.59237mg100V680mW500mASingle40MHz100V500mA100V260V6V500mA4.01mm4.77mm2.41mmROHS3 CompliantLead Free500mV15 Weeks3yesCECCNPNNo SVHCNo
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
12 December 2023
TM1650 LED Driver IC Features, Working Principle, Applications, Usage and More
Ⅰ. Overview of TM1650Ⅱ. Symbol, footprint and pin configuration of TM1650Ⅲ. Features of TM1650 LED driverⅣ. Technical parameters of TM1650 LED driverⅤ. How does the TM1650 LED driver... -
13 December 2023
74HC00 Pin Configuration, Replacements, Applications and Other Details
Ⅰ. Overview of 74HC00Ⅱ. Pin configuration and functions of 74HC00Ⅲ. What are the features of 74HC00?Ⅳ. Technical parameters of 74HC00Ⅴ. Working principle of 74HC00Ⅵ. Absolute maximum ratings of... -
13 December 2023
2N2222A NPN Transistor Features, Technical Parameters, Working Principle, Applications and Usage
Ⅰ. Overview of 2N2222A transistorⅡ. Symbol, footprint and pin configuration of 2N2222A transistorⅢ. What are the features of 2N2222A transistor?Ⅳ. Technical parameters of 2N2222A transistorⅤ. How does the... -
14 December 2023
AT24C256 EEPROM Features, Functions, Working Principle, Applications and AT24C256 vs 24LC256
Ⅰ. What is programmable read-only memory?Ⅱ. Overview of AT24C256 EEPROMⅢ. Pin configuration of AT24C256 EEPROMⅣ. What are the features of AT24C256 EEPROM?Ⅴ. Functions of AT24C256 EEPROMⅥ. Working principle...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.