Bourns Inc. TIP29E-S
- Part Number:
- TIP29E-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2469458-TIP29E-S
- Description:
- TRANS NPN 140V 1A
- Datasheet:
- TIP29E-S
Bourns Inc. TIP29E-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. TIP29E-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220
- PackagingTube
- Published1993
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Max Power Dissipation2W
- Base Part NumberTIP29
- PolarityNPN
- Power - Max2W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)700mV
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA 4V
- Current - Collector Cutoff (Max)300μA
- Vce Saturation (Max) @ Ib, Ic700mV @ 125mA, 1A
- Collector Emitter Breakdown Voltage140V
- Voltage - Collector Emitter Breakdown (Max)140V
- Current - Collector (Ic) (Max)1A
- Collector Base Voltage (VCBO)180V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
TIP29E-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 200mA 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 140V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1A volts.
TIP29E-S Features
the DC current gain for this device is 40 @ 200mA 4V
the vce saturation(Max) is 700mV @ 125mA, 1A
the supplier device package of TO-220
TIP29E-S Applications
There are a lot of Bourns Inc.
TIP29E-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 200mA 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 140V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1A volts.
TIP29E-S Features
the DC current gain for this device is 40 @ 200mA 4V
the vce saturation(Max) is 700mV @ 125mA, 1A
the supplier device package of TO-220
TIP29E-S Applications
There are a lot of Bourns Inc.
TIP29E-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP29E-S More Descriptions
TRANS GP BJT NPN 140V 1A 3PIN TO-220
NPN TRANSISTOR 140V 1A
NPN TRANSISTOR 140V 1A
The three parts on the right have similar specifications to TIP29E-S.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackagePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberPolarityPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Base Voltage (VCBO)Radiation HardeningRoHS StatusLifecycle StatusFactory Lead TimeSurface MountWeightTransistor Element MaterialOperating TemperatureJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeJEDEC-95 CodeTransition FrequencyCollector Emitter Saturation VoltageEmitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP29E-SThrough HoleThrough HoleTO-220-33TO-220Tube1993Obsolete1 (Unlimited)150°C-65°C2WTIP29NPN2WNPN700mV1A40 @ 200mA 4V300μA700mV @ 125mA, 1A140V140V1A180VNoROHS3 Compliant--------------------------------------------------
-
-Through HoleTO-220-33-Tube1999Active1 (Unlimited)--2WTIP29--NPN80V1A15 @ 1A 4V300μA700mV @ 125mA, 1A80V--80VNoROHS3 CompliantACTIVE (Last Updated: 3 days ago)2 WeeksNO4.535924gSILICON-65°C~150°C TJe3yes3EAR99Tin (Sn)Other Transistors80V2601A3MHz4031Single2WCOLLECTORSWITCHING3MHzNPNTO-220AB3MHz700mV5V406.35mm6.35mm25.4mmNo SVHCLead Free--------------
-
--------------------------------------------------------------100V-PNPTO-218-90WBulkTO-218-3-Through Hole3MHz20 @ 4A, 4V-15A
-
Through HoleThrough HoleTO-218-33SOT-93Tube1993Obsolete1 (Unlimited)150°C-65°C3.5W-PNP3.5WPNP60V15A20 @ 4A 4V700μA3V @ 3.3A, 10A60V60V15A100V-ROHS3 Compliant------65°C~150°C TJ------------1-90W-------7V--------------------
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