Fairchild/ON Semiconductor TIP29ATU
- Part Number:
- TIP29ATU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2846771-TIP29ATU
- Description:
- TRANS NPN 60V 1A TO-220
- Datasheet:
- TO220B03 Pkg Drawing TIP29,30 A,B,C
Fairchild/ON Semiconductor TIP29ATU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP29ATU.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220-3
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Voltage - Rated DC60V
- Max Power Dissipation2W
- Current Rating1A
- Frequency3MHz
- Base Part NumberTIP29
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation2W
- Power - Max2W
- Gain Bandwidth Product3MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A 4V
- Current - Collector Cutoff (Max)300μA
- Vce Saturation (Max) @ Ib, Ic700mV @ 125mA, 1A
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)1A
- Frequency - Transition3MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min15
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
TIP29ATU Overview
In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 125mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Product comes in the supplier's device package TO-220-3.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
TIP29ATU Features
the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-220-3
TIP29ATU Applications
There are a lot of ON Semiconductor
TIP29ATU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 125mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Product comes in the supplier's device package TO-220-3.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
TIP29ATU Features
the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-220-3
TIP29ATU Applications
There are a lot of ON Semiconductor
TIP29ATU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP29ATU More Descriptions
Bipolar Transistors - BJT NPN/60V/1A
TRANS NPN 60V 1A TO-220
OEMs, CMs ONLY (NO BROKERS)
TRANS NPN 60V 1A TO-220
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to TIP29ATU.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Number of PinsPublishedView Compare
-
TIP29ATUThrough HoleThrough HoleTO-220-3TO-220-3150°C TJTubeObsolete1 (Unlimited)150°C-65°C60V2W1A3MHzTIP291NPNSingle2W2W3MHzNPN60V1A15 @ 1A 4V300μA700mV @ 125mA, 1A60V60V1A3MHz60V5V15RoHS CompliantLead Free-----------------
-
------------------------------------60V700mV @ 125mA, 1ANPNTO-220-3-2WBulkTO-220-3150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A--
-
------------------------------------100V-PNPTO-218-90WBulkTO-218-3-Through Hole3MHz20 @ 4A, 4V-15A--
-
Through HoleThrough HoleTO-218-3SOT-93-65°C~150°C TJTubeObsolete1 (Unlimited)150°C-65°C-3.5W---1PNP-90W3.5W-PNP60V15A20 @ 4A 4V700μA3V @ 3.3A, 10A60V60V15A-100V7V-ROHS3 Compliant---------------31993
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