STMicroelectronics TIP2955
- Part Number:
- TIP2955
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465507-TIP2955
- Description:
- TRANS PNP 60V 15A TO-247
- Datasheet:
- TIP2955
STMicroelectronics TIP2955 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP2955.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight9.071847g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation90W
- Current Rating-15A
- Frequency3MHz
- Base Part NumberTIP2955
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation90W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
- Current - Collector Cutoff (Max)700μA
- JEDEC-95 CodeTO-247AD
- Vce Saturation (Max) @ Ib, Ic3V @ 3.3A, 10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- VCEsat-Max3 V
- Height20.15mm
- Length15.75mm
- Width5.15mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP2955 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 15A volts.
TIP2955 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 3MHz
TIP2955 Applications
There are a lot of STMicroelectronics
TIP2955 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 15A volts.
TIP2955 Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 3MHz
TIP2955 Applications
There are a lot of STMicroelectronics
TIP2955 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP2955 More Descriptions
Bipolar (BJT) Transistor PNP 60V 15A 90W Through Hole TO-247-3
Bipolar (Bjt) Single Transistor, Pnp, 70 V, 90 W, 15 A, 20 Rohs Compliant: Yes |Stmicroelectronics TIP2955
Trans GP BJT PNP 60V 15A 90000mW 3-Pin(3 Tab) TO-247 Tube
TIP2955 Series PNP 60 V 15 A Complementary Power Darlington Transistor -TO-247-3
Bipolar Transistors - BJT PNP Power Trans 15A 60V 90W
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, 15A, 100V, TO247; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 70V; Transition Frequency ft: -; Power Dissipation Pd: 90W; DC Collector Current: 15A; DC Current Gain hFE: 20hFE; Transistor Cas
Bipolar (Bjt) Single Transistor, Pnp, 70 V, 90 W, 15 A, 20 Rohs Compliant: Yes |Stmicroelectronics TIP2955
Trans GP BJT PNP 60V 15A 90000mW 3-Pin(3 Tab) TO-247 Tube
TIP2955 Series PNP 60 V 15 A Complementary Power Darlington Transistor -TO-247-3
Bipolar Transistors - BJT PNP Power Trans 15A 60V 90W
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, 15A, 100V, TO247; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 70V; Transition Frequency ft: -; Power Dissipation Pd: 90W; DC Collector Current: 15A; DC Current Gain hFE: 20hFE; Transistor Cas
The three parts on the right have similar specifications to TIP2955.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPublishedPbfree CodeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax Breakdown VoltageView Compare
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TIP2955ACTIVE (Last Updated: 7 months ago)8 WeeksThrough HoleThrough HoleTO-247-339.071847gSILICON150°C TJTubee3Active1 (Unlimited)3EAR99Tin (Sn)Other Transistors-100V90W-15A3MHzTIP295531Single90WSWITCHING3MHzPNPPNP60V15A20 @ 4A 4V700μATO-247AD3V @ 3.3A, 10A60V3MHz1V100V7V203 V20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free-------------------
-
-12 Weeks-Through HoleTO-220-3--SILICON-55°C~150°C TJTubee3Active1 (Unlimited)3EAR99Matte Tin (Sn)-----TIP2931--SWITCHING-NPNNPN--15 @ 1A 4V300μATO-220AB700mV @ 125mA, 1A-3MHz----------ROHS3 Compliant-NO1993yesSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedSINGLE30W100V1A3MHz-----
-
--Through HoleThrough HoleTO-220-3---150°C TJTube-Obsolete1 (Unlimited)----60V2W1A3MHzTIP29-1Single2W-3MHz-NPN60V1A15 @ 1A 4V300μA-700mV @ 125mA, 1A60V--60V5V15------RoHS CompliantLead Free---------2W60V1A3MHzTO-220-3150°C-65°CNPN-
-
ACTIVE (Last Updated: 3 days ago)2 WeeksThrough HoleThrough HoleTO-220-331.214g-150°C TJBulk-Active1 (Unlimited)----40V2W1A3MHzTIP29-1Single2W-3MHz-NPN40V1A15 @ 1A 4V300μA-700mV @ 125mA, 1A60V-700mV40V5V15-6.35mm6.35mm6.35mm-NoROHS3 CompliantLead Free-2013-------2W40V1A3MHzTO-220-3150°C-65°CNPN40V
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