STMicroelectronics STF715
- Part Number:
- STF715
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2466989-STF715
- Description:
- TRANS NPN 80V 1.5A SOT89
- Datasheet:
- ST(F,N)715
STMicroelectronics STF715 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF715.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation1.4W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating1.5A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTF715
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.4W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A 2V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage80V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)5V
- hFE Min140
- Height1.6mm
- Length4.6mm
- Width2.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STF715 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
STF715 Features
the DC current gain for this device is 40 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz
STF715 Applications
There are a lot of STMicroelectronics
STF715 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
STF715 Features
the DC current gain for this device is 40 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz
STF715 Applications
There are a lot of STMicroelectronics
STF715 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
STF715 More Descriptions
Bipolar (Bjt) Single Transistor, Npn, 80 V, 1.4 W
Trans GP BJT NPN 80V 1.5A 4-Pin(3 Tab) SOT-89 T/R
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN, 140V, 1.5A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-De
Trans GP BJT NPN 80V 1.5A 4-Pin(3 Tab) SOT-89 T/R
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN, 140V, 1.5A, SOT-89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-89; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-De
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