STMicroelectronics STF724
- Part Number:
- STF724
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2468910-STF724
- Description:
- TRANS NPN 30V 3A SOT-89
- Datasheet:
- STF724, STN724
STMicroelectronics STF724 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STF724.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation1.4W
- Terminal FormFLAT
- Current Rating3A
- Frequency100MHz
- Base Part NumberSTF724
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.4W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 2V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic1.1V @ 150mA, 3A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage1.1V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Height1.6mm
- Length4.6mm
- Width2.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STF724 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.1V @ 150mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
STF724 Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 100MHz
STF724 Applications
There are a lot of STMicroelectronics
STF724 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.1V @ 150mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
STF724 Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 150mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 100MHz
STF724 Applications
There are a lot of STMicroelectronics
STF724 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
STF724 More Descriptions
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 30V 3A 4-Pin(3 Tab) SOT-89 T/R
NPN power transistor 3A 30V STF724
TRANSISTOR, NPN, 30V, 3A, SOT-89; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:30V; Current Ic Continuous a Max:3000mA; Voltage, Vce Sat Max:0.4V; Power Dissipation:1.4W; Min Hfe:30; ft, ;RoHS Compliant: Yes
TRANSISTOR, NPN, 30V, 3A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1.4W; DC Collector Current:3A; DC Current Gain hFE:100; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:400mV; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:3A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:50MHz; Hfe Min:30; No. of Transistors:1; Package / Case:SOT-89; Power Dissipation Pd:1.4W; Power Dissipation Ptot Max:1.4W; SMD Marking:724; Termination Type:SMD; Voltage Vcbo:60V
Trans GP BJT NPN 30V 3A 4-Pin(3 Tab) SOT-89 T/R
NPN power transistor 3A 30V STF724
TRANSISTOR, NPN, 30V, 3A, SOT-89; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:30V; Current Ic Continuous a Max:3000mA; Voltage, Vce Sat Max:0.4V; Power Dissipation:1.4W; Min Hfe:30; ft, ;RoHS Compliant: Yes
TRANSISTOR, NPN, 30V, 3A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1.4W; DC Collector Current:3A; DC Current Gain hFE:100; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:400mV; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:3A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:50MHz; Hfe Min:30; No. of Transistors:1; Package / Case:SOT-89; Power Dissipation Pd:1.4W; Power Dissipation Ptot Max:1.4W; SMD Marking:724; Termination Type:SMD; Voltage Vcbo:60V
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