STMicroelectronics STD13003T4
- Part Number:
- STD13003T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2464241-STD13003T4
- Description:
- TRANS NPN 400V 1.5A DPAK
- Datasheet:
- STD13003T4
STMicroelectronics STD13003T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD13003T4.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation20W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTD13
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation20W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic3V @ 500mA, 1.5A
- Collector Emitter Breakdown Voltage400V
- Max Breakdown Voltage400V
- Emitter Base Voltage (VEBO)9V
- hFE Min5
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STD13003T4 Overview
DC current gain in this device equals 5 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 500mA, 1.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 1.5A volts.
STD13003T4 Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
STD13003T4 Applications
There are a lot of STMicroelectronics
STD13003T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 5 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 500mA, 1.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 1.5A volts.
STD13003T4 Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
STD13003T4 Applications
There are a lot of STMicroelectronics
STD13003T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
STD13003T4 More Descriptions
Trans GP BJT NPN 400V 1.5A 20000mW 3-Pin(2 Tab) DPAK T/R
Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Power Bipolar, NPN, 2V, 500mA, DPAK, Tape and ReelSTMicroelectronics SCT
Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Power Bipolar, NPN, 2V, 500mA, DPAK, Tape and ReelSTMicroelectronics SCT
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