STD13003T4

STMicroelectronics STD13003T4

Part Number:
STD13003T4
Manufacturer:
STMicroelectronics
Ventron No:
2464241-STD13003T4
Description:
TRANS NPN 400V 1.5A DPAK
ECAD Model:
Datasheet:
STD13003T4

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Specifications
STMicroelectronics STD13003T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD13003T4.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    20W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    STD13
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    20W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    400V
  • Max Collector Current
    1.5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5 @ 1A 2V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 500mA, 1.5A
  • Collector Emitter Breakdown Voltage
    400V
  • Max Breakdown Voltage
    400V
  • Emitter Base Voltage (VEBO)
    9V
  • hFE Min
    5
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STD13003T4 Overview
DC current gain in this device equals 5 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 500mA, 1.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 1.5A volts.

STD13003T4 Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V


STD13003T4 Applications
There are a lot of STMicroelectronics
STD13003T4 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
STD13003T4 More Descriptions
Trans GP BJT NPN 400V 1.5A 20000mW 3-Pin(2 Tab) DPAK T/R
Bipolar Transistors - BJT H/V FST SWCH PW TRNS NPN
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Power Bipolar, NPN, 2V, 500mA, DPAK, Tape and ReelSTMicroelectronics SCT
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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