Rohm Semiconductor SST4401T116

SST4401T116 Overview
In this device, the DC current gain is 100 @ 150mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.A 600mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

SST4401T116 Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz


SST4401T116 Applications
There are a lot of ROHM Semiconductor
SST4401T116 applications of single BJT transistors.


Inverter
Interface
Driver
Muting