Rohm Semiconductor SST3906T116

SST3906T116 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -200mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 200mA volts at its maximum.

SST3906T116 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz


SST3906T116 Applications
There are a lot of ROHM Semiconductor
SST3906T116 applications of single BJT transistors.


Inverter
Interface
Driver
Muting