Rohm Semiconductor SST3904T116

SST3904T116 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 40V volts.Product comes in the supplier's device package SST3.There is a 40V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

SST3904T116 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SST3


SST3904T116 Applications
There are a lot of ROHM Semiconductor
SST3904T116 applications of single BJT transistors.


Inverter
Interface
Driver
Muting