Rohm Semiconductor SST2222AT116
- Part Number:
- SST2222AT116
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2463004-SST2222AT116
- Description:
- TRANS NPN 40V 0.6A SST3
- Datasheet:
- SST2222AT116
Rohm Semiconductor SST2222AT116 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor SST2222AT116.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberT2222A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min35
- Continuous Collector Current600mA
- Turn Off Time-Max (toff)285ns
- Collector-Base Capacitance-Max7pF
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SST2222AT116 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 600mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
SST2222AT116 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
SST2222AT116 Applications
There are a lot of ROHM Semiconductor
SST2222AT116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 600mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
SST2222AT116 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
SST2222AT116 Applications
There are a lot of ROHM Semiconductor
SST2222AT116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
SST2222AT116 More Descriptions
Trans GP BJT NPN 40V 0.6A 200mW 3-Pin SOT-23 T/R
SST2222A Series 40 V 0.2 W 0.6 A SMT NPN Medium Power Transistor - SST-3
Transistor SOT-23 NPN; Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW;
Transistor,npn, 40V, Sst3; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:150Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:300Mhz Rohs Compliant: Yes |Rohm SST2222AT116
TRANSISTOR SOT-23 NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: 150mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 150mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power Bipolar
SST2222A Series 40 V 0.2 W 0.6 A SMT NPN Medium Power Transistor - SST-3
Transistor SOT-23 NPN; Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW;
Transistor,npn, 40V, Sst3; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:150Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:300Mhz Rohs Compliant: Yes |Rohm SST2222AT116
TRANSISTOR SOT-23 NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: 150mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 150mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Power Bipolar
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