Fairchild/ON Semiconductor SS9011GBU
- Part Number:
- SS9011GBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585611-SS9011GBU
- Description:
- TRANS NPN 30V 0.03A TO-92
- Datasheet:
- SS9011
Fairchild/ON Semiconductor SS9011GBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SS9011GBU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max400mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce72 @ 1mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)30mA
- Transition Frequency2MHz
- Frequency - Transition2MHz
- RoHS StatusROHS3 Compliant
SS9011GBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 72 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The part has a transition frequency of 2MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
SS9011GBU Features
the DC current gain for this device is 72 @ 1mA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
a transition frequency of 2MHz
SS9011GBU Applications
There are a lot of Rochester Electronics, LLC
SS9011GBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 72 @ 1mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The part has a transition frequency of 2MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
SS9011GBU Features
the DC current gain for this device is 72 @ 1mA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
a transition frequency of 2MHz
SS9011GBU Applications
There are a lot of Rochester Electronics, LLC
SS9011GBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
SS9011GBU More Descriptions
Bipolar (BJT) Transistor NPN 30V 30mA 2MHz 400mW Through Hole TO-92-3
TRANS NPN 30V 0.03A TO92-3
MISCELLANEOUS MOSFETS;
TRANS NPN 30V 0.03A TO92-3
MISCELLANEOUS MOSFETS;
The three parts on the right have similar specifications to SS9011GBU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusAdditional FeatureSupplier Device PackageBase Part NumberView Compare
-
SS9011GBUThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3yesObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLEunknownNOT APPLICABLEO-PBCY-T3COMMERCIAL1SINGLE400mWAMPLIFIERNPNNPN72 @ 1mA 5V100nA ICBO300mV @ 1mA, 10mA30V30mA2MHz2MHzROHS3 Compliant----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3yesObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLEunknownNOT APPLICABLEO-PBCY-T3COMMERCIAL1SINGLE450mWAMPLIFIERPNPPNP60 @ 1mA 5V50nA ICBO700mV @ 5mA, 100mA45V100mA190MHz190MHzROHS3 CompliantLOW NOISE--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulk--Obsolete1 (Unlimited)----------450mW--PNP100 @ 1mA 5V50nA ICBO700mV @ 5mA, 100mA45V100mA-190MHz--TO-92-3SS9015
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--150°C TJTape & Box (TB)--Obsolete1 (Unlimited)----------450mW--PNP200 @ 1mA 5V50nA ICBO700mV @ 5mA, 100mA45V100mA-190MHz--TO-92-3SS9015
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