Vishay Siliconix SI5515DC-T1-E3
- Part Number:
- SI5515DC-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2473557-SI5515DC-T1-E3
- Description:
- MOSFET N/P-CH 20V 4.4A 1206-8
- ECAD Model:
-
- Datasheet:
- SI5515DC-T1-E3
Vishay Siliconix SI5515DC-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5515DC-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SMD, Flat Lead
- Number of Pins8
- Supplier Device Package1206-8 ChipFET™
- Weight84.99187mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance40mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation1.1W
- Base Part NumberSI5515
- Number of Elements2
- Number of Channels2
- Power Dissipation1.1W
- Turn On Delay Time18 ns
- Power - Max1.1W
- FET TypeN and P-Channel
- Rds On (Max) @ Id, Vgs40mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C4.4A 3A
- Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V
- Rise Time32ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)4.4A
- Threshold Voltage400mV
- Gate to Source Voltage (Vgs)8V
- FET FeatureLogic Level Gate
- Drain to Source Resistance69mOhm
- Rds On Max40 mΩ
- Nominal Vgs400 mV
- Height1.1mm
- Length3.05mm
- Width1.65mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI5515DC-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI5515DC-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI5515DC-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI5515DC-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI5515DC-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI5515DC-T1-E3 More Descriptions
Dual N & P Channel 20 V 0.04 Ohms Surface Mount Power Mosfet - 1206-8 ChipFET
COMPLEMENTARY 20-V (D-S) MOSFET | Siliconix / Vishay SI5515DC-T1-E3
Trans MOSFET N/P-CH 20V 4.4A/3A 8-Pin Chip FET T/R
Dual N/p Channel Mosfet, 20V, 1206
N/P-CH 1206-8 CHIPFET 20V 40/86MOHM @ 4.5VCOMPLEMENTARY 20-V (D-S) MOSFET
French Electronic Distributor since 1988
DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:400mV
COMPLEMENTARY 20-V (D-S) MOSFET | Siliconix / Vishay SI5515DC-T1-E3
Trans MOSFET N/P-CH 20V 4.4A/3A 8-Pin Chip FET T/R
Dual N/p Channel Mosfet, 20V, 1206
N/P-CH 1206-8 CHIPFET 20V 40/86MOHM @ 4.5V
French Electronic Distributor since 1988
DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:400mV
The three parts on the right have similar specifications to SI5515DC-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberNumber of ElementsNumber of ChannelsPower DissipationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)FET FeatureDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountElement ConfigurationOperating ModeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsPolarity/Channel TypeDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET TechnologyFactory Lead TimeSubcategoryTerminal PositionTerminal FormQualification StatusConfigurationDrain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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SI5515DC-T1-E3Surface MountSurface Mount8-SMD, Flat Lead81206-8 ChipFET™84.99187mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2009Obsolete1 (Unlimited)40mOhm150°C-55°C1.1WSI5515221.1W18 ns1.1WN and P-Channel40mOhm @ 4.4A, 4.5V1V @ 250μA4.4A 3A7.5nC @ 4.5V32ns20V32 ns42 ns4.4A400mV8VLogic Level Gate69mOhm40 mΩ400 mV1.1mm3.05mm1.65mmUnknownNoROHS3 CompliantLead Free--------------------------- -
Surface MountSurface Mount8-SMD, Flat Lead8---55°C~150°C TJTape & Reel (TR)TrenchFET®2011Obsolete1 (Unlimited)90mOhm--2.1WSI55092-2.1W-4.5WN and P-Channel52m Ω @ 5A, 4.5V2V @ 250μA6.1A 4.8A6.6nC @ 5V75ns-60 ns25 ns5A2V12VLogic Level Gate------No SVHCNoROHS3 CompliantLead FreeSILICONe3yes8EAR99Matte Tin (Sn)260408DualENHANCEMENT MODESWITCHING455pF @ 10VN-CHANNEL AND P-CHANNEL5A20V10AMETAL-OXIDE SEMICONDUCTOR--------
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Surface MountSurface Mount8-SMD, Flat Lead8-84.99187mg-55°C~150°C TJTape & Reel (TR)TrenchFET®2015Active1 (Unlimited)140mOhm--3.1WSI5504221.5W-3.12W 3.1WN and P-Channel65m Ω @ 3.1A, 10V3V @ 250μA4A 3.7A7nC @ 10V----3.7A-20VLogic Level Gate--1.5 V---UnknownNoROHS3 CompliantLead FreeSILICONe3yes8EAR99Matte Tin (Sn)260308-ENHANCEMENT MODESWITCHING220pF @ 15VN-CHANNEL AND P-CHANNEL4A30V10AMETAL-OXIDE SEMICONDUCTOR14 WeeksOther TransistorsDUALC BEND----
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Surface MountSurface Mount8-SMD, Flat Lead8---55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)---1.1WSI55132----N and P-Channel75m Ω @ 3.1A, 4.5V1.5V @ 250μA3.1A 2.1A6nC @ 4.5V-20V--2.1A--Logic Level Gate--------ROHS3 Compliant-SILICONe3yes8EAR99PURE MATTE TIN260308-ENHANCEMENT MODE--N-CHANNEL AND P-CHANNEL3.1A--METAL-OXIDE SEMICONDUCTOR-Other TransistorsDUALC BENDNot QualifiedSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE0.075Ohm20V
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