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SI5515CDC-T1-GE3

Vishay Siliconix SI5515CDC-T1-GE3

Part Number:
SI5515CDC-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2847656-SI5515CDC-T1-GE3
Description:
MOSFET N/P-CH 20V 4A 1206-8
ECAD Model:
Datasheet:
SI5515CDC-T1-GE3

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Specifications
Vishay Siliconix SI5515CDC-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5515CDC-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Number of Pins
    8
  • Weight
    84.99187mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    PURE MATTE TIN
  • Max Power Dissipation
    3.1W
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    SI5515
  • Pin Count
    8
  • Number of Elements
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    36m Ω @ 6A, 4.5V
  • Vgs(th) (Max) @ Id
    800mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    632pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    11.3nC @ 5V
  • Drain to Source Voltage (Vdss)
    20V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Continuous Drain Current (ID)
    4A
  • Threshold Voltage
    400mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain-source On Resistance-Max
    0.036Ohm
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI5515CDC-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI5515CDC-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI5515CDC-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI5515CDC-T1-GE3 More Descriptions
MOSFET N/P-CH 20V 4A 1206-8 / Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R
Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N & P CH, 20V, 0.03OHM, 4A, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:3.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:1206; No. of Pins:8; MSL:-
Product Comparison
The three parts on the right have similar specifications to SI5515CDC-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    FET Technology
    FET Feature
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Turn On Delay Time
    Power - Max
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Pbfree Code
    Resistance
    Subcategory
    Case Connection
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Qualification Status
    Configuration
    DS Breakdown Voltage-Min
    View Compare
  • SI5515CDC-T1-GE3
    SI5515CDC-T1-GE3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    84.99187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    PURE MATTE TIN
    3.1W
    DUAL
    C BEND
    260
    30
    SI5515
    8
    2
    ENHANCEMENT MODE
    1.3W
    N and P-Channel
    SWITCHING
    36m Ω @ 6A, 4.5V
    800mV @ 250μA
    632pF @ 10V
    11.3nC @ 5V
    20V
    N-CHANNEL AND P-CHANNEL
    4A
    400mV
    8V
    4A
    0.036Ohm
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI5511DC-T1-E3
    SI5511DC-T1-E3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    84.99187mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2010
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    1.3W
    -
    -
    -
    -
    SI5511
    -
    2
    -
    -
    N and P-Channel
    -
    55mOhm @ 4.8A, 4.5V
    2V @ 250μA
    435pF @ 15V
    7.1nC @ 5V
    30V
    -
    4A
    -
    12V
    -
    -
    -
    Logic Level Gate
    -
    -
    ROHS3 Compliant
    -
    1206-8 ChipFET™
    150°C
    -55°C
    2
    15 ns
    3.1W 2.6W
    4A 3.6A
    78ns
    65 ns
    33 ns
    30V
    435pF
    150mOhm
    55 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SI5515CDC-T1-GE3 vs SI5511DC-T1-E3
  • SI5504BDC-T1-E3
    SI5504BDC-T1-E3
    Vishay Siliconix
    14 Weeks
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    84.99187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2003
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    3.1W
    DUAL
    C BEND
    260
    40
    SI5504
    8
    2
    ENHANCEMENT MODE
    1.5W
    N and P-Channel
    SWITCHING
    65m Ω @ 3.1A, 10V
    3V @ 250μA
    220pF @ 15V
    7nC @ 10V
    -
    N-CHANNEL AND P-CHANNEL
    4A
    -
    20V
    4A
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    2
    4 ns
    3.12W 3.1W
    4A 3.7A
    10ns
    5 ns
    10 ns
    30V
    -
    -
    -
    yes
    140mOhm
    Other Transistors
    DRAIN
    10A
    1.1mm
    3.05mm
    1.65mm
    -
    -
    -
    SI5515CDC-T1-GE3 vs SI5504BDC-T1-E3
  • SI5513DC-T1-GE3
    SI5513DC-T1-GE3
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    8-SMD, Flat Lead
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    Obsolete
    1 (Unlimited)
    8
    EAR99
    PURE MATTE TIN
    1.1W
    DUAL
    C BEND
    260
    30
    SI5513
    8
    2
    ENHANCEMENT MODE
    -
    N and P-Channel
    -
    75m Ω @ 3.1A, 4.5V
    1.5V @ 250μA
    -
    6nC @ 4.5V
    20V
    N-CHANNEL AND P-CHANNEL
    2.1A
    -
    -
    3.1A
    0.075Ohm
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    3.1A 2.1A
    -
    -
    -
    -
    -
    -
    -
    yes
    -
    Other Transistors
    -
    -
    -
    -
    -
    Not Qualified
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    20V
    SI5515CDC-T1-GE3 vs SI5513DC-T1-GE3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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