Vishay Siliconix SI5509DC-T1-E3
- Part Number:
- SI5509DC-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2847778-SI5509DC-T1-E3
- Description:
- MOSFET N/P-CH 20V 6.1A 1206-8
- ECAD Model:
-
- Datasheet:
- SI5509DC-T1-E3
Vishay Siliconix SI5509DC-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5509DC-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SMD, Flat Lead
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance90mOhm
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation2.1W
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSI5509
- Pin Count8
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.1W
- Power - Max4.5W
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs52m Ω @ 5A, 4.5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds455pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6.1A 4.8A
- Gate Charge (Qg) (Max) @ Vgs6.6nC @ 5V
- Rise Time75ns
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)60 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)5A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)5A
- Drain to Source Breakdown Voltage20V
- Pulsed Drain Current-Max (IDM)10A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI5509DC-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI5509DC-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI5509DC-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI5509DC-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI5509DC-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI5509DC-T1-E3 More Descriptions
Trans MOSFET N/P-CH 20V 5A/3.9A 8-Pin Chip FET T/R
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:5V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C ;RoHS Compliant: Yes
MOSFET, N & P CH, 20V, 6.1A, CHIPFET; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:4.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:ChipFET; No. of Pins:8; MSL:-
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:5V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to 150°C ;RoHS Compliant: Yes
MOSFET, N & P CH, 20V, 6.1A, CHIPFET; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:4.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:ChipFET; No. of Pins:8; MSL:-
The three parts on the right have similar specifications to SI5509DC-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationPower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)FET TechnologyFET FeatureREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeWeightTerminal PositionTerminal FormDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxSubcategoryNumber of ChannelsNominal VgsQualification StatusConfigurationDS Breakdown Voltage-MinView Compare
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SI5509DC-T1-E3Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2011e3yesObsolete1 (Unlimited)8EAR9990mOhmMatte Tin (Sn)2.1W26040SI550982DualENHANCEMENT MODE2.1W4.5WN and P-ChannelSWITCHING52m Ω @ 5A, 4.5V2V @ 250μA455pF @ 10V6.1A 4.8A6.6nC @ 5V75nsN-CHANNEL AND P-CHANNEL60 ns25 ns5A2V12V5A20V10AMETAL-OXIDE SEMICONDUCTORLogic Level GateNo SVHCNoROHS3 CompliantLead Free------------- -
Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3-Active1 (Unlimited)8EAR99-PURE MATTE TIN3.1W26030SI551582-ENHANCEMENT MODE1.3W-N and P-ChannelSWITCHING36m Ω @ 6A, 4.5V800mV @ 250μA632pF @ 10V-11.3nC @ 5V-N-CHANNEL AND P-CHANNEL--4A400mV8V4A--METAL-OXIDE SEMICONDUCTORLogic Level GateUnknownNoROHS3 CompliantLead Free14 Weeks84.99187mgDUALC BEND20V0.036Ohm------
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Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesActive1 (Unlimited)8EAR99140mOhmMatte Tin (Sn)3.1W26030SI550482-ENHANCEMENT MODE1.5W3.12W 3.1WN and P-ChannelSWITCHING65m Ω @ 3.1A, 10V3V @ 250μA220pF @ 15V4A 3.7A7nC @ 10V-N-CHANNEL AND P-CHANNEL--3.7A-20V4A30V10AMETAL-OXIDE SEMICONDUCTORLogic Level GateUnknownNoROHS3 CompliantLead Free14 Weeks84.99187mgDUALC BEND--Other Transistors21.5 V---
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Surface MountSurface Mount8-SMD, Flat Lead8SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)8EAR99-PURE MATTE TIN1.1W26030SI551382-ENHANCEMENT MODE--N and P-Channel-75m Ω @ 3.1A, 4.5V1.5V @ 250μA-3.1A 2.1A6nC @ 4.5V-N-CHANNEL AND P-CHANNEL--2.1A--3.1A--METAL-OXIDE SEMICONDUCTORLogic Level Gate--ROHS3 Compliant---DUALC BEND20V0.075OhmOther Transistors--Not QualifiedSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE20V
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