Vishay Siliconix SI4914BDY-T1-E3

Name: SI4914BDY-T1-E3
Brand: Vishay Siliconix
SKU: 2847881-SI4914BDY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4914BDY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2847881-SI4914BDY-T1-E3

Description:: MOSFET 2N-CH 30V 8.4A 8-SOIC

ECAD Model:

Datasheet:: SI4914BDY-T1-E3

Specifications

Vishay Siliconix SI4914BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4914BDY-T1-E3.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Supplier Device Package
8-SO
Weight
506.605978mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
LITTLE FOOT®
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Base Part Number
SI4914
Number of Elements
2
Number of Channels
2
Turn On Delay Time
10 ns
Power - Max
2.7W 3.1W
FET Type
2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs
21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250μA
Current - Continuous Drain (Id) @ 25°C
8.4A 8A
Gate Charge (Qg) (Max) @ Vgs
10.5nC @ 4.5V
Rise Time
9ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
7.4A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Feature
Standard
Drain to Source Resistance
23mOhm
Rds On Max
21 mΩ
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SI4914BDY-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4914BDY-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4914BDY-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

SI4914BDY-T1-E3 More Descriptions

Trans MOSFET N-CH 30V 6.7A/7.4A 8-Pin SOIC N T/R
DUAL N CHANNEL MOSFET, 30V, SOIC
DUAL N-CH 30V(D-S)MOSFET W/SCHOTTKY
DUAL N CHANNEL MOSFET, 30V, SOIC; Transi; DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:7.4A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0155ohm; Rds(on) Test Voltage Vgs:20V

Product Comparison

The three parts on the right have similar specifications to SI4914BDY-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Base Part Number

Number of Elements

Number of Channels

Turn On Delay Time

Power - Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Feature

Drain to Source Resistance

Rds On Max

Height

Length

Width

Radiation Hardening

RoHS Status

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Element Configuration

Operating Mode

Power Dissipation

FET Technology

Reach Compliance Code

Qualification Status

Transistor Application

Drain Current-Max (Abs) (ID)

Input Capacitance (Ciss) (Max) @ Vds

Threshold Voltage

Input Capacitance

Max Junction Temperature (Tj)

REACH SVHC

Lead Free

View Compare
SI4914BDY-T1-E3

Vishay Siliconix

15 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

506.605978mg

-55°C~150°C TJ

Tape & Reel (TR)

LITTLE FOOT®

2009

Obsolete

1 (Unlimited)

150°C

-55°C

3.1W

SI4914

2

2

10 ns

2.7W 3.1W

2 N-Channel (Half Bridge)

21mOhm @ 8A, 10V

2.7V @ 250μA

8.4A 8A

10.5nC @ 4.5V

9ns

30V

9 ns

16 ns

7.4A

20V

30V

Standard

23mOhm

21 mΩ

1.5mm

5mm

4mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4963BDY-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

186.993455mg

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

Active

1 (Unlimited)

-

-

1.1W

SI4963

2

-

30 ns

-

2 P-Channel (Dual)

32m Ω @ 6.5A, 4.5V

1.4V @ 250μA

-

21nC @ 4.5V

40ns

20V

55 ns

80 ns

4.9A

12V

-

Logic Level Gate

-

-

1.55mm

5mm

4mm

No

ROHS3 Compliant

SILICON

e3

yes

8

EAR99

Matte Tin (Sn)

Other Transistors

GULL WING

260

40

8

Dual

ENHANCEMENT MODE

1.1W

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

-

-

-

-

SI4914BDY-T1-E3 vs SI4963BDY-T1-GE3
SI4974DY-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

Obsolete

1 (Unlimited)

-

-

1.1W

SI4974

2

-

-

-

2 N-Channel (Dual)

19m Ω @ 8A, 10V

3V @ 250μA

6A 4.4A

11nC @ 4.5V

11ns

-

6 ns

15 ns

6A

20V

30V

Logic Level Gate

-

-

-

-

-

-

ROHS3 Compliant

SILICON

e3

yes

8

EAR99

MATTE TIN

FET General Purpose Power

GULL WING

260

40

8

Dual

ENHANCEMENT MODE

2W

METAL-OXIDE SEMICONDUCTOR

unknown

Not Qualified

SWITCHING

4.4A

-

-

-

-

-

-

SI4914BDY-T1-E3 vs SI4974DY-T1-E3
SI4909DY-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

506.605978mg

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

Active

1 (Unlimited)

150°C

-55°C

3.2W

-

2

2

10 ns

3.2W

2 P-Channel (Dual)

27mOhm @ 8A, 10V

2.5V @ 250μA

8A

63nC @ 10V

9ns

40V

13 ns

50 ns

-8A

20V

-40V

Logic Level Gate

21mOhm

27 mΩ

1.75mm

-

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

Dual

-

2W

-

-

-

-

-

2000pF @ 20V

-1.2V

2nF

150°C

No SVHC

Lead Free

SI4914BDY-T1-E3 vs SI4909DY-T1-GE3