Vishay Siliconix SI4816BDY-T1-E3

Name: SI4816BDY-T1-E3
Brand: Vishay Siliconix
SKU: 3069687-SI4816BDY-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4816BDY-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 3069687-SI4816BDY-T1-E3

Description:: MOSFET 2N-CH 30V 5.8A 8-SOIC

ECAD Model:

Datasheet:: SI4816BDY-T1-E3

Specifications

Vishay Siliconix SI4816BDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4816BDY-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
186.993455mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
LITTLE FOOT®
Published
2005
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
18.5mOhm
Terminal Finish
MATTE TIN
Max Power Dissipation
1.25W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
SI4816
Pin Count
8
Number of Elements
2
Number of Channels
2
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
13 ns
Power - Max
1W 1.25W
FET Type
2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs
18.5m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Current - Continuous Drain (Id) @ 25°C
5.8A 8.2A
Gate Charge (Qg) (Max) @ Vgs
10nC @ 5V
Rise Time
9ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
31 ns
Continuous Drain Current (ID)
5.8A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Nominal Vgs
3 V
Height
1.75mm
Length
5mm
Width
4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI4816BDY-T1-E3 Description The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal. SI4816BDY-T1-E3 Applications  RF front end wideband applications in the GHz range  Analog and digital cellular telephones  Cordless telephones (CT1, CT2, DECT, etc.)  Radar detectors  Satellite TV tuners (SATV)  MATV/CATV amplifiers SI4816BDY-T1-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested

SI4816BDY-T1-E3 More Descriptions

Transistor MOSFET Array Dual N-CH 30V 5.8A/8.2A 8-Pin SOIC T/RAvnet Japan
Dual N-Channel 30 V 18.5 mOhms Surface Mount Power Mosfet - SOIC-8
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL N CHANNEL MOSFET, 30V, SOIC; Transi; DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8.2A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0093ohm; Rds(on) Test Voltage Vgs:20V

Certification