Vishay Siliconix SI4288DY-T1-GE3
- Part Number:
- SI4288DY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2473296-SI4288DY-T1-GE3
- Description:
- MOSFET 2N-CH 40V 9.2A 8SO
- ECAD Model:
-
- Datasheet:
- SI4288DY-T1-GE3
Vishay Siliconix SI4288DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4288DY-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight506.605978mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Max Power Dissipation3.1W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time7 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs20m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds580pF @ 20V
- Current - Continuous Drain (Id) @ 25°C9.2A
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)7.4A
- Threshold Voltage1.2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Height1.75mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI4288DY-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4288DY-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4288DY-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4288DY-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4288DY-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4288DY-T1-GE3 More Descriptions
Transistor MOSFET Array Dual N-CH 40V 9.2A 8-Pin SOIC T/RAvnet Japan
Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:40V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:9.2A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes
MOSFET, NN CH, W/D, 40V, 9.2A, SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:40V; Module Configuration:Dual; On Resistance Rds(on):0.0165ohm; Power Dissipation Pd:3.1W
Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:40V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:9.2A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes
MOSFET, NN CH, W/D, 40V, 9.2A, SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:40V; Module Configuration:Dual; On Resistance Rds(on):0.0165ohm; Power Dissipation Pd:3.1W
The three parts on the right have similar specifications to SI4288DY-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyMax Junction Temperature (Tj)FET FeatureHeightREACH SVHCRadiation HardeningRoHS StatusLead FreeSubcategoryBase Part NumberRise TimeDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Power - MaxDrain-source On Resistance-MaxResistanceView Compare
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SI4288DY-T1-GE314 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8506.605978mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2015e3Active1 (Unlimited)8EAR99MATTE TIN3.1WGULL WING2603082DualENHANCEMENT MODE2W7 ns2 N-Channel (Dual)SWITCHING20m Ω @ 10A, 10V2.5V @ 250μA580pF @ 20V9.2A15nC @ 10V8 ns16 ns7.4A1.2V20V40VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.75mmNo SVHCNoROHS3 CompliantLead Free--------- -
15 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8540.001716mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013-Obsolete1 (Unlimited)8EAR99-2.9WGULL WING--82DualENHANCEMENT MODE1.9W9 ns2 N-Channel (Dual)SWITCHING32.5m Ω @ 8A, 10V2.5V @ 250μA375pF @ 20V-10.5nC @ 10V7 ns10 ns7A2.5V20V40VMETAL-OXIDE SEMICONDUCTOR-Standard-No SVHCNoROHS3 CompliantLead FreeFET General Purpose PowerSI428611ns40V7A---
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-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Obsolete1 (Unlimited)8EAR99PURE MATTE TIN2.8WGULL WING2603082DualENHANCEMENT MODE2.8W-2 N-Channel (Dual)SWITCHING15.3m Ω @ 9.5A, 10V2.5V @ 250μA1000pF @ 15V-26nC @ 10V--8A-20V30VMETAL-OXIDE SEMICONDUCTOR-Logic Level Gate--NoROHS3 Compliant--SI4276-30V8A3.6W 2.8W0.0153Ohm-
-
15 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8186.993455mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3Obsolete1 (Unlimited)8EAR99PURE MATTE TIN3.1WGULL WING2603082-ENHANCEMENT MODE2W13 ns2 N-Channel (Dual)SWITCHING23.5m Ω @ 7A, 10V2.5V @ 250μA785pF @ 15V8.5A23nC @ 10V9 ns18 ns6.8A-20V30VMETAL-OXIDE SEMICONDUCTOR-Standard--NoROHS3 CompliantLead Free--11ns----23.5mOhm
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