STMicroelectronics SD2932BW
- Part Number:
- SD2932BW
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2477531-SD2932BW
- Description:
- IC TRANS RF PWR HF/VHF/UHF M244
- Datasheet:
- SD2932BW
STMicroelectronics SD2932BW technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics SD2932BW.
- Factory Lead Time32 Weeks
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberSD2932
- RoHS StatusROHS3 Compliant
Description:
The STMicroelectronics SD2932BW is a high-frequency, high-voltage, high-power RF transistor. It is designed for use in RF power amplifiers, oscillators, and other RF applications. It is a MOSFET type transistor with a maximum drain-source voltage of 30V and a maximum drain current of 8A.
Features:
• High-frequency, high-voltage, high-power RF transistor
• Maximum drain-source voltage of 30V
• Maximum drain current of 8A
• Low gate-source capacitance
• Low gate-drain capacitance
• Low gate-source leakage current
• Low gate-drain leakage current
• Low thermal resistance
• High power gain
• High frequency operation
Applications:
The STMicroelectronics SD2932BW is suitable for use in RF power amplifiers, oscillators, and other RF applications. It is suitable for use in high-power, high-frequency applications such as cellular base stations, satellite communications, and other wireless communication systems. It is also suitable for use in automotive, industrial, and consumer electronics applications.
The STMicroelectronics SD2932BW is a high-frequency, high-voltage, high-power RF transistor. It is designed for use in RF power amplifiers, oscillators, and other RF applications. It is a MOSFET type transistor with a maximum drain-source voltage of 30V and a maximum drain current of 8A.
Features:
• High-frequency, high-voltage, high-power RF transistor
• Maximum drain-source voltage of 30V
• Maximum drain current of 8A
• Low gate-source capacitance
• Low gate-drain capacitance
• Low gate-source leakage current
• Low gate-drain leakage current
• Low thermal resistance
• High power gain
• High frequency operation
Applications:
The STMicroelectronics SD2932BW is suitable for use in RF power amplifiers, oscillators, and other RF applications. It is suitable for use in high-power, high-frequency applications such as cellular base stations, satellite communications, and other wireless communication systems. It is also suitable for use in automotive, industrial, and consumer electronics applications.
SD2932BW More Descriptions
RF MOSFET Transistors HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
Rf Power |Stmicroelectronics SD2932BW
IC TRANS RF PWR HF/VHF/UHF M244
Rf Power |Stmicroelectronics SD2932BW
IC TRANS RF PWR HF/VHF/UHF M244
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