Toshiba Semiconductor and Storage RN2427TE85LF
- Part Number:
- RN2427TE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2472650-RN2427TE85LF
- Description:
- TRANS PREBIAS PNP 200MW SMINI
- ECAD Model:
-
- Datasheet:
- RN2427TE85LF
Toshiba Semiconductor and Storage RN2427TE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2427TE85LF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO 4.55
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 100mA 1V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Max Frequency200MHz
- Transition Frequency200MHz
- Frequency - Transition200MHz
- Emitter Base Voltage (VEBO)-6V
- hFE Min90
- Resistor - Base (R1)2.2 k Ω
- Continuous Collector Current-800mA
- Resistor - Emitter Base (R2)10 k Ω
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
RN2427TE85LF Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2427TE85LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2427TE85LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2427TE85LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2427TE85LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN2427TE85LF More Descriptions
Trans Digital BJT PNP 50V 800mA 200mW 3-Pin S-Mini T/R
TRANS PREBIAS PNP 50V 0.8A SMINI
PNP TRANSIST ARRAY -50V S-MINI
TRANS PREBIAS PNP 50V 0.8A SMINI
PNP TRANSIST ARRAY -50V S-MINI
The three parts on the right have similar specifications to RN2427TE85LF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusTransistor Element MaterialReach Compliance CodePower - MaxMax Breakdown VoltageSurface MountPolarity/Channel TypeCurrent - Collector (Ic) (Max)Power Dissipation-Max (Abs)Voltage - Collector Emitter Breakdown (Max)View Compare
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RN2427TE85LF12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33Tape & Reel (TR)2009Active1 (Unlimited)3EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO 4.558541.21.00.75BIP General Purpose Small Signal200mWDUALGULL WING31PNPSingle200mWSWITCHINGPNP - Pre-Biased50V800mA90 @ 100mA 1V500nA250mV @ 1mA, 50mA50V200MHz200MHz200MHz-6V902.2 k Ω-800mA10 k ΩNoRoHS Compliant---------- -
11 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33Cut Tape (CT)2014Discontinued1 (Unlimited)------BIP General Purpose Small Signal200mW---1PNPDual--PNP - Pre-Biased300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V--200MHz-10V8047 k Ω-100mA47 k Ω-RoHS CompliantSILICONunknown200mW50V-----
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14 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-Cut Tape (CT)2014Discontinued1 (Unlimited)------BIP General Purpose Small Signal----1----PNP - Pre-Biased50V-60 @ 100mA 1V500nA250mV @ 2mA, 50mA---200MHz--1 k Ω-1 k Ω-RoHS CompliantSILICONunknown200mW-YESPNP800mA0.2W-
-
12 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-Cut Tape (CT)2016Discontinued1 (Unlimited)-------200mW----PNP---PNP - Pre-Biased-50V-70 @ 10mA 5V500nA300mV @ 250μA, 5mA---200MHz-15V7047 k Ω-100mA22 k Ω-RoHS Compliant------100mA-50V
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