Toshiba Semiconductor and Storage RN2404TE85LF
- Part Number:
- RN2404TE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2470962-RN2404TE85LF
- Description:
- TRANS PREBIAS PNP 0.2W S-MINI
- ECAD Model:
-
- Datasheet:
- RN2404TE85LF
Toshiba Semiconductor and Storage RN2404TE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2404TE85LF.
- Factory Lead Time11 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2014
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation200mW
- Reach Compliance Codeunknown
- Number of Elements1
- PolarityPNP
- Element ConfigurationDual
- Power - Max200mW
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Frequency - Transition200MHz
- Emitter Base Voltage (VEBO)-10V
- hFE Min80
- Resistor - Base (R1)47 k Ω
- Continuous Collector Current-100mA
- Resistor - Emitter Base (R2)47 k Ω
- RoHS StatusRoHS Compliant
RN2404TE85LF Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2404TE85LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2404TE85LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2404TE85LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2404TE85LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN2404TE85LF More Descriptions
Bipolar Transistors - Pre-Biased BRT PNP Single Ic -100mA -50V VCEO
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin S-Mini T/R
Bias Resistor Built-in Transistor (Single)
TRANS PREBIAS PNP 50V 0.1A SMINI
PNP TRANSIST ARRAY -50V S-MINI
Trans Digital BJT PNP 50V 100mA 200mW 3-Pin S-Mini T/R
Bias Resistor Built-in Transistor (Single)
TRANS PREBIAS PNP 50V 0.1A SMINI
PNP TRANSIST ARRAY -50V S-MINI
The three parts on the right have similar specifications to RN2404TE85LF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationReach Compliance CodeNumber of ElementsPolarityElement ConfigurationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusNumber of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeTerminal PositionTerminal FormPin CountPower DissipationTransistor ApplicationMax FrequencyTransition FrequencyRadiation HardeningSurface MountPolarity/Channel TypeCurrent - Collector (Ic) (Max)Power Dissipation-Max (Abs)Voltage - Collector Emitter Breakdown (Max)View Compare
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RN2404TE85LF11 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICONCut Tape (CT)2014Discontinued1 (Unlimited)BIP General Purpose Small Signal200mWunknown1PNPDual200mWPNP - Pre-Biased300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V200MHz-10V8047 k Ω-100mA47 k ΩRoHS Compliant-------------------- -
12 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33-Tape & Reel (TR)2009Active1 (Unlimited)BIP General Purpose Small Signal200mW-1PNPSingle-PNP - Pre-Biased50V800mA90 @ 100mA 1V500nA250mV @ 1mA, 50mA50V-200MHz-6V902.2 k Ω-800mA10 k ΩRoHS Compliant3EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO 4.558541.21.00.75DUALGULL WING3200mWSWITCHING200MHz200MHzNo-----
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14 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-SILICONCut Tape (CT)2014Discontinued1 (Unlimited)BIP General Purpose Small Signal-unknown1--200mWPNP - Pre-Biased50V-60 @ 100mA 1V500nA250mV @ 2mA, 50mA--200MHz--1 k Ω-1 k ΩRoHS Compliant--------------YESPNP800mA0.2W-
-
12 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3--Cut Tape (CT)2016Discontinued1 (Unlimited)-200mW--PNP--PNP - Pre-Biased-50V-70 @ 10mA 5V500nA300mV @ 250μA, 5mA--200MHz-15V7047 k Ω-100mA22 k ΩRoHS Compliant----------------100mA-50V
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