Toshiba Semiconductor and Storage RN2421(TE85L,F)
- Part Number:
- RN2421(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2470167-RN2421(TE85L,F)
- Description:
- TRANS PREBIAS PNP 50V TO236-3
- Datasheet:
- RN2421(TE85L,F)
Toshiba Semiconductor and Storage RN2421(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2421(TE85L,F).
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2014
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryBIP General Purpose Small Signal
- Reach Compliance Codeunknown
- Number of Elements1
- Power - Max200mW
- Polarity/Channel TypePNP
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 100mA 1V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 2mA, 50mA
- Current - Collector (Ic) (Max)800mA
- Frequency - Transition200MHz
- Power Dissipation-Max (Abs)0.2W
- Resistor - Base (R1)1 k Ω
- Resistor - Emitter Base (R2)1 k Ω
- RoHS StatusRoHS Compliant
RN2421(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2421(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2421(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2421(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2421(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN2421(TE85L,F) More Descriptions
Trans Digital BJT PNP 50V 800mA 200mW 3-Pin S-Mini T/R
Bias Resistor Built-in Transistor (Single)
TRANS PREBIAS PNP 50V 0.8A SMINI
Bias Resistor Built-in Transistor (Single)
TRANS PREBIAS PNP 50V 0.8A SMINI
The three parts on the right have similar specifications to RN2421(TE85L,F).
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryReach Compliance CodeNumber of ElementsPower - MaxPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)DC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusMountNumber of PinsNumber of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeMax Power DissipationTerminal PositionTerminal FormPin CountPolarityElement ConfigurationPower DissipationTransistor ApplicationMax Collector CurrentCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyEmitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRadiation HardeningMax Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)View Compare
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RN2421(TE85L,F)14 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YESSILICONCut Tape (CT)2014Discontinued1 (Unlimited)BIP General Purpose Small Signalunknown1200mWPNPPNP - Pre-Biased50V60 @ 100mA 1V500nA250mV @ 2mA, 50mA800mA200MHz0.2W1 k Ω1 k ΩRoHS Compliant---------------------------
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12 WeeksSurface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2009Active1 (Unlimited)BIP General Purpose Small Signal-1--PNP - Pre-Biased50V90 @ 100mA 1V500nA250mV @ 1mA, 50mA-200MHz-2.2 k Ω10 k ΩRoHS CompliantSurface Mount33EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO 4.558541.21.00.75200mWDUALGULL WING3PNPSingle200mWSWITCHING800mA50V200MHz200MHz-6V90-800mANo--
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11 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-SILICONCut Tape (CT)2014Discontinued1 (Unlimited)BIP General Purpose Small Signalunknown1200mW-PNP - Pre-Biased300mV80 @ 10mA 5V500nA300mV @ 250μA, 5mA-200MHz-47 k Ω47 k ΩRoHS CompliantSurface Mount3------200mW---PNPDual--100mA50V---10V80-100mA-50V-
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12 WeeksSurface MountTO-236-3, SC-59, SOT-23-3--Cut Tape (CT)2016Discontinued1 (Unlimited)-----PNP - Pre-Biased-50V70 @ 10mA 5V500nA300mV @ 250μA, 5mA100mA200MHz-47 k Ω22 k ΩRoHS Compliant--------200mW---PNP--------15V70-100mA--50V
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