Toshiba Semiconductor and Storage RN2402S,LF(D
- Part Number:
- RN2402S,LF(D
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3069652-RN2402S,LF(D
- Description:
- TRANS PREBIAS PNP 0.2W S-MINI
- ECAD Model:
-
- Datasheet:
- RN2402S,LF(D
Toshiba Semiconductor and Storage RN2402S,LF(D technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2402S,LF(D.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Reach Compliance Codeunknown
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency200MHz
- Frequency - Transition200MHz
- Resistor - Base (R1)10 k Ω
- Resistor - Emitter Base (R2)10 k Ω
- RoHS StatusRoHS Compliant
RN2402S,LF(D Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2402S,LF(D or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2402S,LF(D. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN2402S,LF(D or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN2402S,LF(D. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN2402S,LF(D More Descriptions
TRANSISTOR PNP 50V 100MA S-MINI
TRANS PREBIAS PNP 0.2W S-MINI
TRANS PREBIAS PNP 50V 0.1A SMINI
IC OPAMP GP 500KHZ RRO 8SOIC
TRANS PREBIAS PNP 0.2W S-MINI
TRANS PREBIAS PNP 50V 0.1A SMINI
IC OPAMP GP 500KHZ RRO 8SOIC
The three parts on the right have similar specifications to RN2402S,LF(D.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureMax Power DissipationTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionResistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusFactory Lead TimeNumber of PinsMax Operating TemperatureMin Operating TemperatureSubcategoryElement ConfigurationRadiation HardeningSurface MountCurrent - Collector (Ic) (Max)Power Dissipation-Max (Abs)PolarityVoltage - Collector Emitter Breakdown (Max)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentView Compare
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RN2402S,LF(DSurface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICONTape & Reel (TR)2014Obsolete1 (Unlimited)3BUILT IN BIAS RESISTANCE RATIO IS 1200mWDUALGULL WINGunknownR-PDSO-G31SINGLE WITH BUILT-IN RESISTOR200mWSWITCHINGPNPPNP - Pre-Biased300mV100mA50 @ 10mA 5V500nA300mV @ 250μA, 5mA50V200MHz200MHz10 k Ω10 k ΩRoHS Compliant---------------- -
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)2009Active1 (Unlimited)3BUILT IN BIAS RESISTANCE RATIO IS 1200mWDUALGULL WING--1--SWITCHINGPNPPNP - Pre-Biased250mV800mA65 @ 100mA 1V500nA250mV @ 1mA, 50mA50V200MHz200MHz2.2 k Ω2.2 k ΩRoHS Compliant12 Weeks3150°C-55°CBIP General Purpose Small SignalSingleNo--------
-
-Surface MountTO-236-3, SC-59, SOT-23-3SILICONCut Tape (CT)2014Discontinued1 (Unlimited)-----unknown-1-200mW-PNPPNP - Pre-Biased50V-60 @ 100mA 1V500nA250mV @ 2mA, 50mA--200MHz1 k Ω1 k ΩRoHS Compliant14 Weeks---BIP General Purpose Small Signal--YES800mA0.2W-----
-
-Surface MountTO-236-3, SC-59, SOT-23-3-Cut Tape (CT)2016Discontinued1 (Unlimited)--200mW---------PNP - Pre-Biased-50V-70 @ 10mA 5V500nA300mV @ 250μA, 5mA--200MHz47 k Ω22 k ΩRoHS Compliant12 Weeks-------100mA-PNP50V-15V70-100mA
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