Toshiba Semiconductor and Storage RN1901FETE85LF
- Part Number:
- RN1901FETE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2461437-RN1901FETE85LF
- Description:
- TRANS 2NPN PREBIAS 0.1W ES6
- ECAD Model:
-
- Datasheet:
- RN1901-06
Toshiba Semiconductor and Storage RN1901FETE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1901FETE85LF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation100mW
- Reach Compliance Codeunknown
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)10V
- hFE Min30
- Resistor - Base (R1)4.7k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)4.7k Ω
- RoHS StatusRoHS Compliant
RN1901FETE85LF Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1901FETE85LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1901FETE85LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1901FETE85LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1901FETE85LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1901FETE85LF More Descriptions
Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
Cut Tape (CT) Surface Mount 2NPN - Pre-Biased (Dual) Dual Pre-Biased Bipolar Transistor (BJT) 30 @ 10mA 5V 100mA 100mW 250MHz
TRANS 2NPN PREBIAS 0.1W ES6
Cut Tape (CT) Surface Mount 2NPN - Pre-Biased (Dual) Dual Pre-Biased Bipolar Transistor (BJT) 30 @ 10mA 5V 100mA 100mW 250MHz
TRANS 2NPN PREBIAS 0.1W ES6
The three parts on the right have similar specifications to RN1901FETE85LF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationReach Compliance CodeNumber of ElementsPolarityElement ConfigurationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusSupplier Device PackageWeightPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
-
RN1901FETE85LF12 WeeksSurface MountSurface MountSOT-563, SOT-666SILICONCut Tape (CT)2014Active1 (Unlimited)BIP General Purpose Small Signal100mWunknown2NPNDual2 NPN - Pre-Biased (Dual)300mV100mA30 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V250MHz10V304.7k Ω100mA4.7k ΩRoHS Compliant------ -
12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363-Tape & Reel (TR)2014Active1 (Unlimited)-200mW--NPN-2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz5V802.2kOhms100mA47kOhmsRoHS CompliantUS66.010099mg200mW50V100mA
-
-Surface MountSurface Mount6-TSSOP, SC-88, SOT-363-Cut Tape (CT)2014Obsolete1 (Unlimited)-200mW----2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz--10k Ω-47k ΩRoHS Compliant--200mW--
-
12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363-Tape & Reel (TR)2014Active1 (Unlimited)-200mW--NPN-2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz6V8010k Ω100mA47k ΩRoHS Compliant-6.010099mg---
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