Toshiba Semiconductor and Storage RN1905,LF(CT
- Part Number:
- RN1905,LF(CT
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3584864-RN1905,LF(CT
- Description:
- TRANS 2NPN PREBIAS 0.2W US6
- Datasheet:
- RN1901-06
Toshiba Semiconductor and Storage RN1905,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1905,LF(CT.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Supplier Device PackageUS6
- Weight6.010099mg
- PackagingTape & Reel (TR)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation200mW
- PolarityNPN
- Power - Max200mW
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)5V
- hFE Min80
- Resistor - Base (R1)2.2kOhms
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47kOhms
- RoHS StatusRoHS Compliant
RN1905,LF(CT Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1905,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1905,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1905,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1905,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1905,LF(CT More Descriptions
Trans Digital BJT NPN 50V 0.1A 6-Pin US Embossed T/R
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
TRANS 2NPN PREBIAS 0.2W US6
IC OPAMP GP 2 CIRCUIT 10UMAX
TRANS US6 PLN (LF) 200MW
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
TRANS 2NPN PREBIAS 0.2W US6
IC OPAMP GP 2 CIRCUIT 10UMAX
TRANS US6 PLN (LF) 200MW
The three parts on the right have similar specifications to RN1905,LF(CT.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseSupplier Device PackageWeightPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationPolarityPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusView Compare
-
RN1905,LF(CT12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363US66.010099mgTape & Reel (TR)2014Active1 (Unlimited)200mWNPN200mW2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V100mA50V250MHz5V802.2kOhms100mA47kOhmsRoHS Compliant-
-
-Surface MountSurface Mount6-TSSOP, SC-88, SOT-363--Cut Tape (CT)2014Obsolete1 (Unlimited)200mW-200mW2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V--50V250MHz--10k Ω-47k ΩRoHS Compliant
-
12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363-6.010099mgTape & Reel (TR)2014Active1 (Unlimited)200mWNPN-2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V--50V250MHz6V8010k Ω100mA47k ΩRoHS Compliant
-
12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363-6.010099mgCut Tape (CT)2014Active1 (Unlimited)200mWNPN-2 NPN - Pre-Biased (Dual)300mV100mA50 @ 10mA 5V500nA300mV @ 250μA, 5mA50V--50V250MHz10V5010k Ω100mA10k ΩRoHS Compliant
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