Toshiba Semiconductor and Storage RN1961FE(TE85L,F)
- Part Number:
- RN1961FE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3584883-RN1961FE(TE85L,F)
- Description:
- TRANS 2NPN PREBIAS 0.1W ES6
- ECAD Model:
-
- Datasheet:
- RN1961-66FE
Toshiba Semiconductor and Storage RN1961FE(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1961FE(TE85L,F).
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingCut Tape (CT)
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation100mW
- PolarityNPN
- Element ConfigurationDual
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)10V
- hFE Min30
- Resistor - Base (R1)4.7k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)4.7k Ω
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
RN1961FE(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1961FE(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1961FE(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1961FE(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1961FE(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1961FE(TE85L,F) More Descriptions
Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
TRANS 2NPN PREBIAS 0.1W ES6
TRANS 2NPN PREBIAS 0.1W ES6
The three parts on the right have similar specifications to RN1961FE(TE85L,F).
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationPolarityElement ConfigurationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusFactory Lead TimeSupplier Device PackageWeightPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
-
RN1961FE(TE85L,F)Surface MountSurface MountSOT-563, SOT-6666Cut Tape (CT)2014Obsolete1 (Unlimited)150°C-55°C100mWNPNDual2 NPN - Pre-Biased (Dual)50V100mA30 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V250MHz10V304.7k Ω100mA4.7k ΩNoRoHS Compliant------- -
Surface MountSurface Mount6-TSSOP, SC-88, SOT-363-Tape & Reel (TR)2014Active1 (Unlimited)--200mWNPN-2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz5V802.2kOhms100mA47kOhms-RoHS Compliant12 WeeksUS66.010099mg200mW50V100mA
-
Surface MountSurface Mount6-TSSOP, SC-88, SOT-363-Tape & Reel (TR)2014Active1 (Unlimited)--200mWNPN-2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz6V8010k Ω100mA47k Ω-RoHS Compliant12 Weeks-6.010099mg---
-
Surface MountSurface Mount6-TSSOP, SC-88, SOT-363-Cut Tape (CT)2014Active1 (Unlimited)--200mWNPN-2 NPN - Pre-Biased (Dual)300mV100mA50 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz10V5010k Ω100mA10k Ω-RoHS Compliant12 Weeks-6.010099mg---
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