Toshiba Semiconductor and Storage RN1902,LF(CT
- Part Number:
- RN1902,LF(CT
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 3068355-RN1902,LF(CT
- Description:
- TRANS 2NPN PREBIAS 0.2W US6
- ECAD Model:
-
- Datasheet:
- RN1901-06
Toshiba Semiconductor and Storage RN1902,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1902,LF(CT.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Weight6.010099mg
- PackagingCut Tape (CT)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation200mW
- PolarityNPN
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)10V
- hFE Min50
- Resistor - Base (R1)10k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10k Ω
- RoHS StatusRoHS Compliant
RN1902,LF(CT Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1902,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1902,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1902,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1902,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1902,LF(CT More Descriptions
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
X34 Pb-F Us6 Pln (Lf) Transistor Pd=200Mw F=250Mhz
US6-PLN(LF), BIAS REISTOR BUILT-IN TRANSISTOR (BRT)
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
X34 Pb-F Us6 Pln (Lf) Transistor Pd=200Mw F=250Mhz
US6-PLN(LF), BIAS REISTOR BUILT-IN TRANSISTOR (BRT)
The three parts on the right have similar specifications to RN1902,LF(CT.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationPolarityTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusPower - MaxTransistor Element MaterialSubcategoryReach Compliance CodeNumber of ElementsElement ConfigurationView Compare
-
RN1902,LF(CT12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636.010099mgCut Tape (CT)2014Active1 (Unlimited)200mWNPN2 NPN - Pre-Biased (Dual)300mV100mA50 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz10V5010k Ω100mA10k ΩRoHS Compliant------- -
-Surface MountSurface Mount6-TSSOP, SC-88, SOT-363-Cut Tape (CT)2014Obsolete1 (Unlimited)200mW-2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz--10k Ω-47k ΩRoHS Compliant200mW-----
-
-Surface MountSurface MountSOT-563, SOT-666-Cut Tape (CT)2014Obsolete1 (Unlimited)100mWNPN2 NPN - Pre-Biased (Dual)300mV100mA50 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V250MHz10V5010k Ω100mA10k ΩRoHS Compliant-SILICONBIP General Purpose Small Signalunknown2Dual
-
12 WeeksSurface MountSurface MountSOT-563, SOT-666-Cut Tape (CT)2014Discontinued1 (Unlimited)100mWNPN2 NPN - Pre-Biased (Dual)300mV100mA120 @ 1mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V250MHz5V12010k Ω100mA-RoHS Compliant-SILICONBIP General Purpose Small Signalunknown2Dual
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 December 2023
STM32F429IGT6 Microcontroller: Feature-Rich Embedded System Design
Ⅰ. What is STM32F429IGT6?Ⅱ. Application fields of STM32F429IGT6Ⅲ. Naming rules of STM32F429IGT6Ⅳ. Precautions for using STM32F429IGT6Ⅴ. STM32F429IGT6 characteristicsⅥ. Power supply diagram of STM32F429IGT6Ⅶ. Specifications of STM32F429IGT6Ⅷ. How to... -
22 December 2023
SS8050 NPN Epitaxial Silicon Transistor: Ideal for Small Power Amplification and Switching Applications
Ⅰ. Introduction of SS8050Ⅱ. Technical parameters of SS8050 transistorⅢ. NPN-type transistor and PNP-type transistorⅣ. How to use SS8050 transistor?Ⅴ. Electrical characteristics of SS8050 transistorⅥ. What is the difference... -
25 December 2023
N76E003AT20 Microcontroller: The Intelligent Engine of Embedded Systems
Ⅰ. What is N76E003AT20?Ⅱ. Characteristics of N76E003AT20 microcontrollerⅢ. N76E003AT20 dimension and packageⅣ. Operating modesⅤ. Who produces N76E003AT20 microcontroller?Ⅵ. N76E003AT20 microcontroller specificationsⅦ. What are the uses of N76E003AT20 microcontroller?Ⅷ.... -
25 December 2023
ULN2803ADWR Darlington Transistor Array Advantages, Market Trends, Applications, Pinout and Feature Description
Ⅰ. ULN2803ADWR overviewⅡ. What are the advantages of the ULN2803ADWR chip?Ⅲ. Market trends of ULN2803ADWRⅣ. Where is ULN2803ADWR mainly used?Ⅴ. Symbol, footprint and pin configuration of ULN2803ADWRⅥ. Precautions...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.