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Infineon Technologies PTFB212503FLV2R250XTMA1
- Part Number:
- PTFB212503FLV2R250XTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848372-PTFB212503FLV2R250XTMA1
- Description:
- IC AMP RF LDMOS
- ECAD Model:
-
- Datasheet:
- PTFB212503FLV2R250XTMA1
Infineon Technologies PTFB212503FLV2R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFB212503FLV2R250XTMA1.
- Factory Lead Time12 Weeks
- Number of Pins5
- Published2016
- Part StatusActive
- ECCN CodeEAR99
- Voltage - Rated65V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency2.17GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test1.85A
- Gain18.1 dB
- Power - Output55W
- Voltage - Test30V
- RoHS StatusRoHS Compliant
PTFB212503FLV2R250XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB212503FLV2R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB212503FLV2R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB212503FLV2R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB212503FLV2R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFB212503FLV2R250XTMA1 More Descriptions
LDMOS FET, High Power RF, 240W, 2.11-2.17GHz, H-34288-4/2 Pkg, T/R 250
Trans RF MOSFET N-CH 65V 5-Pin Case 34288-4/2 T/R
High Power RF LDMOS FET, 240 W, 2110 2170 MHz | Summary of Features: Broadband internal input and output matching; Enhanced for use in DPD error correction systems; Wide video bandwidth; Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = 49.4 dBm - Linear gain = 18 dB - Efficiency = 37% - Intermodulation distortion = 33 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 54 %; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Integrated ESD protection: Human Body Model, Class 2 (minimum); Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)output power; Pb-free, RoHS-compliant; Package: H-34288-4/2, earless
Trans RF MOSFET N-CH 65V 5-Pin Case 34288-4/2 T/R
High Power RF LDMOS FET, 240 W, 2110 2170 MHz | Summary of Features: Broadband internal input and output matching; Enhanced for use in DPD error correction systems; Wide video bandwidth; Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = 49.4 dBm - Linear gain = 18 dB - Efficiency = 37% - Intermodulation distortion = 33 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 54 %; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Integrated ESD protection: Human Body Model, Class 2 (minimum); Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)output power; Pb-free, RoHS-compliant; Package: H-34288-4/2, earless
The three parts on the right have similar specifications to PTFB212503FLV2R250XTMA1.
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ImagePart NumberManufacturerFactory Lead TimeNumber of PinsPublishedPart StatusECCN CodeVoltage - RatedPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestGainPower - OutputVoltage - TestRoHS StatusPackage / CaseSupplier Device PackagePackagingMoisture Sensitivity Level (MSL)Transistor TypeView Compare
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PTFB212503FLV2R250XTMA112 Weeks52016ActiveEAR9965VNOT SPECIFIED2.17GHzNOT SPECIFIED1.85A18.1 dB55W30VRoHS Compliant------ -
12 Weeks-2016-EAR99-NOT SPECIFIED-NOT SPECIFIED----RoHS Compliant-----
-
---Obsolete-65V-960MHz-2.8A19dB112W28VRoHS CompliantH-36260-2H-36260-2Tape & Reel (TR)1 (Unlimited)LDMOS
-
16 Weeks-2013ActiveEAR9965VNOT SPECIFIED1.88GHzNOT SPECIFIED2.6A17 dB80W30VRoHS Compliant-----
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