Infineon Technologies PTFB212503ELV1R250XTMA1
- Part Number:
- PTFB212503ELV1R250XTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2477796-PTFB212503ELV1R250XTMA1
- Description:
- IC AMP RF LDMOS
- Datasheet:
- PTFB212503ELV1R250XTMA1
Infineon Technologies PTFB212503ELV1R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFB212503ELV1R250XTMA1.
- Factory Lead Time12 Weeks
- Published2016
- ECCN CodeEAR99
- Voltage - Rated65V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency2.17GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test1.85A
- Gain18.1 dB
- Power - Output55W
- Voltage - Test30V
- RoHS StatusRoHS Compliant
PTFB212503ELV1R250XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB212503ELV1R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB212503ELV1R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB212503ELV1R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB212503ELV1R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFB212503ELV1R250XTMA1 More Descriptions
LDMOS FET, High Power RF, 240W, 2.11-2.17GHz, H-33288-6 Pkg, T/R 250
IC AMP RF LDMOS
High Power RF LDMOS FET, 240 W, 2110 2170 MHz | Summary of Features: Broadband internal input and output matching; Enhanced for use in DPD error correction systems; Wide video bandwidth; Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = 49.4 dBm - Linear gain = 18 dB - Efficiency = 37% - Intermodulation distortion = 33 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 54 %; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Integrated ESD protection: Human Body Model, Class 2 (minimum); Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)output power; Pb-free, RoHS-compliant; Package: H-33288-6, bolt-down
IC AMP RF LDMOS
High Power RF LDMOS FET, 240 W, 2110 2170 MHz | Summary of Features: Broadband internal input and output matching; Enhanced for use in DPD error correction systems; Wide video bandwidth; Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = 49.4 dBm - Linear gain = 18 dB - Efficiency = 37% - Intermodulation distortion = 33 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 54 %; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Integrated ESD protection: Human Body Model, Class 2 (minimum); Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)output power; Pb-free, RoHS-compliant; Package: H-33288-6, bolt-down
The three parts on the right have similar specifications to PTFB212503ELV1R250XTMA1.
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ImagePart NumberManufacturerFactory Lead TimePublishedECCN CodeVoltage - RatedPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestGainPower - OutputVoltage - TestRoHS StatusPackage / CaseSupplier Device PackagePackagingPart StatusMoisture Sensitivity Level (MSL)Transistor TypeSurface MountNumber of PinsTransistor Element MaterialPbfree CodeNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormPin CountJESD-30 CodeOperating Supply VoltageNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationHalogen FreePolarity/Channel TypeDS Breakdown Voltage-MinFET TechnologyLead FreeView Compare
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PTFB212503ELV1R250XTMA112 Weeks2016EAR9965VNOT SPECIFIED2.17GHzNOT SPECIFIED1.85A18.1 dB55W30VRoHS Compliant----------------------------
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---65V-960MHz-2.8A19dB112W28VRoHS CompliantH-36260-2H-36260-2Tape & Reel (TR)Obsolete1 (Unlimited)LDMOS---------------------
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12 Weeks2010EAR9965VNOT SPECIFIED821MHzNOT SPECIFIED2.15A19.3dB60W-RoHS Compliant2-Flatpack, Fin Leads, Flanged-TrayObsolete1 (Unlimited)LDMOSYES3SILICONyes2HIGH RELIABILITYQUADUNSPECIFIED4R-CQFP-X228V1SINGLEENHANCEMENT MODESOURCEAMPLIFIERHalogen FreeN-CHANNEL65VMETAL-OXIDE SEMICONDUCTORLead Free
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16 Weeks2013EAR9965VNOT SPECIFIED1.88GHzNOT SPECIFIED2.6A17 dB80W30VRoHS Compliant---Active-----------------------
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