Infineon Technologies PTFB211503FLV2R250XTMA1
- Part Number:
- PTFB211503FLV2R250XTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2477561-PTFB211503FLV2R250XTMA1
- Description:
- IC AMP RF LDMOS
- Datasheet:
- PTFB211503FLV2R250XTMA1
Infineon Technologies PTFB211503FLV2R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFB211503FLV2R250XTMA1.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Number of Pins5
- Published2016
- Part StatusActive
- ECCN CodeEAR99
- Max Operating Temperature200°C
- Min Operating Temperature-40°C
- Voltage - Rated65V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency2.17GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Frequency (Max)2.17GHz
- Current - Test1.2A
- Gain18 dB
- Power - Output32W
- Voltage - Test30V
- RoHS StatusRoHS Compliant
PTFB211503FLV2R250XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB211503FLV2R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB211503FLV2R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB211503FLV2R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB211503FLV2R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFB211503FLV2R250XTMA1 More Descriptions
LDMOS FET, High Power RF, 150W, 2.11-2.17GHz, H-34288-4/2 Pkg, T/R 250
Trans RF MOSFET N-CH 65V 5-Pin Case 34288-4/2 T/R
High Power RF LDMOS FET, 150 W, 30 V, 2110 2170 MHz | Summary of Features: Broadband internal matching; Enhanced for use in DPD error correction systems; Typical two-carrier WCDMA performance at 2170 MHz, 30 V, - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 29% - Intermodulation distortion = 34 dBc - Adjacent channel power = 37 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Integrated ESD protection; Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power; Pb-Free and RoHS compliant; Package: H-34288-4/2, earless
Trans RF MOSFET N-CH 65V 5-Pin Case 34288-4/2 T/R
High Power RF LDMOS FET, 150 W, 30 V, 2110 2170 MHz | Summary of Features: Broadband internal matching; Enhanced for use in DPD error correction systems; Typical two-carrier WCDMA performance at 2170 MHz, 30 V, - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 29% - Intermodulation distortion = 34 dBc - Adjacent channel power = 37 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%; Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers; Integrated ESD protection; Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power; Pb-Free and RoHS compliant; Package: H-34288-4/2, earless
The three parts on the right have similar specifications to PTFB211503FLV2R250XTMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountNumber of PinsPublishedPart StatusECCN CodeMax Operating TemperatureMin Operating TemperatureVoltage - RatedPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Number of ElementsFrequency (Max)Current - TestGainPower - OutputVoltage - TestRoHS StatusPackage / CasePackagingMoisture Sensitivity Level (MSL)Transistor TypeView Compare
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PTFB211503FLV2R250XTMA112 WeeksSurface Mount52016ActiveEAR99200°C-40°C65VNOT SPECIFIED2.17GHzNOT SPECIFIED12.17GHz1.2A18 dB32W30VRoHS Compliant-----
-
12 Weeks--2016-EAR99---NOT SPECIFIED-NOT SPECIFIED------RoHS Compliant----
-
12 Weeks--2016ObsoleteEAR99--65VNOT SPECIFIED2.17GHzNOT SPECIFIED--1.3A17.5dB40W30VRoHS CompliantH-33288-6Strip1 (Unlimited)LDMOS
-
16 Weeks--2013ActiveEAR99--65VNOT SPECIFIED1.88GHzNOT SPECIFIED--2.6A17 dB80W30VRoHS Compliant----
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