Infineon Technologies PTFB211501EV1R250XTMA1
- Part Number:
- PTFB211501EV1R250XTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2477548-PTFB211501EV1R250XTMA1
- Description:
- FET RF LDMOS 150W H36248-2
- Datasheet:
- PTFB211501EV1R250XTMA1
Infineon Technologies PTFB211501EV1R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFB211501EV1R250XTMA1.
- Factory Lead Time12 Weeks
- PackagingTape & Reel (TR)
- Published2009
- Part StatusActive
- ECCN CodeEAR99
- Voltage - Rated65V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency2.17GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test1.2A
- Gain18 dB
- Power - Output40W
- Voltage - Test30V
- RoHS StatusRoHS Compliant
PTFB211501EV1R250XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB211501EV1R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB211501EV1R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet PTFB211501EV1R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB211501EV1R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFB211501EV1R250XTMA1 More Descriptions
LDMOS FET, High Power RF, 150W, 2.11-2.17GHz, H-36248-2 Pkg, T/R 250
FET RF LDMOS 150W H36248-2
High Power RF LDMOS FET, 150 W, 30 V, 2110 2170 MHz | Summary of Features: Broadband internal matching; Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjacent channel power = 34 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%; Integrated ESD protection: Human Body Model, Class 2 (minimum); Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power; Pb-free and RoHS compliant; Package: H-36248-2, bolt-down
FET RF LDMOS 150W H36248-2
High Power RF LDMOS FET, 150 W, 30 V, 2110 2170 MHz | Summary of Features: Broadband internal matching; Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjacent channel power = 34 dBc; Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%; Integrated ESD protection: Human Body Model, Class 2 (minimum); Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power; Pb-free and RoHS compliant; Package: H-36248-2, bolt-down
The three parts on the right have similar specifications to PTFB211501EV1R250XTMA1.
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ImagePart NumberManufacturerFactory Lead TimePackagingPublishedPart StatusECCN CodeVoltage - RatedPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestGainPower - OutputVoltage - TestRoHS StatusPackage / CaseSurface MountNumber of PinsTransistor Element MaterialPbfree CodeMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTerminal PositionTerminal FormPin CountJESD-30 CodeOperating Supply VoltageNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationHalogen FreePolarity/Channel TypeTransistor TypeDS Breakdown Voltage-MinFET TechnologyLead FreeView Compare
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PTFB211501EV1R250XTMA112 WeeksTape & Reel (TR)2009ActiveEAR9965VNOT SPECIFIED2.17GHzNOT SPECIFIED1.2A18 dB40W30VRoHS Compliant-------------------------
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12 Weeks-2016ActiveEAR9965VNOT SPECIFIED960MHzNOT SPECIFIED1.2A20 dB50W28VRoHS Compliant------------------------
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12 WeeksTray2010ObsoleteEAR9965VNOT SPECIFIED821MHzNOT SPECIFIED2.15A19.3dB60W-RoHS Compliant2-Flatpack, Fin Leads, FlangedYES3SILICONyes1 (Unlimited)2HIGH RELIABILITYQUADUNSPECIFIED4R-CQFP-X228V1SINGLEENHANCEMENT MODESOURCEAMPLIFIERHalogen FreeN-CHANNELLDMOS65VMETAL-OXIDE SEMICONDUCTORLead Free
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12 WeeksStrip2016ObsoleteEAR9965VNOT SPECIFIED2.17GHzNOT SPECIFIED1.3A17.5dB40W30VRoHS CompliantH-33288-6----1 (Unlimited)--------------LDMOS---
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