Fairchild/ON Semiconductor PN2907ATAR
- Part Number:
- PN2907ATAR
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813404-PN2907ATAR
- Description:
- TRANS PNP 60V 0.8A TO-92
- Datasheet:
- PN2907ATAR
Fairchild/ON Semiconductor PN2907ATAR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN2907ATAR.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating-800mA
- Frequency200MHz
- Base Part NumberPN2907A
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)20nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-1.6V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Turn On Time-Max (ton)45ns
- Height5.33mm
- Length5.2mm
- Width4.19mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PN2907ATAR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
PN2907ATAR Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ATAR Applications
There are a lot of ON Semiconductor
PN2907ATAR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
PN2907ATAR Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ATAR Applications
There are a lot of ON Semiconductor
PN2907ATAR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN2907ATAR More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
General Purpose Transistor PNP Silicon
PN2907A Series 60 V 800 mA Through Hole PNP General Purpose Amplifier - TO-92-3
Transistor GP BJT PNP 60V 0.8A 3-Pin TO-92 Ammo
The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.
General Purpose Transistor PNP Silicon
PN2907A Series 60 V 800 mA Through Hole PNP General Purpose Amplifier - TO-92-3
Transistor GP BJT PNP 60V 0.8A 3-Pin TO-92 Ammo
The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.
The three parts on the right have similar specifications to PN2907ATAR.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn On Time-Max (ton)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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PN2907ATARACTIVE (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON-55°C~150°C TJTape & Box (TB)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-60V625mWBOTTOM-800mA200MHzPN2907A1Single625mWSWITCHING200MHzPNPPNP60V800mA100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA60V200MHz-1.6V60V-60V-5V10045ns5.33mm5.2mm4.19mmNoROHS3 CompliantLead Free------
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---Through HoleTO-226-3, TO-92-3 (TO-226AA)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---------PN2907A------PNP--100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA--------------TO-92-3625mW60V800mA200MHz
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---------PN2907A------PNP--100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA--------------TO-92-3625mW60V800mA200MHz
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---------PN2907A------PNP--100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA--------------TO-92-3625mW60V800mA200MHz
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