Fairchild/ON Semiconductor PN2907ABU
- Part Number:
- PN2907ABU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462905-PN2907ABU
- Description:
- TRANS PNP 60V 0.8A TO-92
- Datasheet:
- PN2907ABU
Fairchild/ON Semiconductor PN2907ABU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN2907ABU.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight179mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating-800mA
- Frequency200MHz
- Base Part NumberPN2907A
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)20nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage400mV
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Turn On Time-Max (ton)45ns
- Height4.7mm
- Length4.7mm
- Width3.93mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PN2907ABU Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).200MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
PN2907ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ABU Applications
There are a lot of ON Semiconductor
PN2907ABU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).200MHz is present in the transition frequency.Maximum collector currents can be below 800mA volts.
PN2907ABU Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ABU Applications
There are a lot of ON Semiconductor
PN2907ABU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN2907ABU More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
PN Series PNP 625 mW 60 V 800 mA Through Hole General Purpose Transistor-TO-92-3
General Purpose Transistor PNP Silicon
Trans GP BJT PNP 60V 0.8A 625mW 3-Pin TO-92 Bag
20nA 60V 625mW 800mA 100@150mA10V 200MHz 1.6V@500mA50mA PNP -55¡Í~ 150¡Í@(Tj) TO-92(TO-92-3) Bipolar Transistors - BJT ROHS
The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.
PN Series PNP 625 mW 60 V 800 mA Through Hole General Purpose Transistor-TO-92-3
General Purpose Transistor PNP Silicon
Trans GP BJT PNP 60V 0.8A 625mW 3-Pin TO-92 Bag
20nA 60V 625mW 800mA 100@150mA10V 200MHz 1.6V@500mA50mA PNP -55¡Í~ 150¡Í@(Tj) TO-92(TO-92-3) Bipolar Transistors - BJT ROHS
The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types are the PN2222A, MMBT2222A, and PZT2222A; respectively.
The three parts on the right have similar specifications to PN2907ABU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishMax Operating TemperatureMin Operating TemperaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusPolarityPower Dissipation-MaxFrequency - TransitionDC Current Gain-Min (hFE)Continuous Collector CurrentTurn Off Time-Max (toff)Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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PN2907ABUACTIVE (Last Updated: 2 days ago)7 WeeksTinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3179mgSILICON-55°C~150°C TJBulk2007e3yesActive1 (Unlimited)3EAR99Other Transistors-60V625mWBOTTOM-800mA200MHzPN2907A1Single625mWSWITCHING200MHzPNPPNP60V800mA100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA60V200MHz400mV-60V-5V10045ns4.7mm4.7mm3.93mmNo SVHCNoROHS3 CompliantLead Free-------------------
-
-8 Weeks-Through Hole-TO-92----Bulk2000e0noActive-3EAR99Other Transistors--BOTTOM---1Single-SWITCHING200MHz--1.6V600mA---60V200MHz1.6V60V5V7545ns-----RoHS Compliant-Tin/Lead (Sn/Pb)150°C-65°CNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not QualifiedPNP625mW200MHz100450mA100ns----
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----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------PN2907A------PNP--100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA------------------------200MHz---TO-92-3625mW60V800mA
-
----Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------PN2907A------PNP--100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA------------------------200MHz---TO-92-3625mW60V800mA
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