NXP USA Inc. PN2907A,126
- Part Number:
- PN2907A,126
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2468523-PN2907A,126
- Description:
- TRANS PNP 60V 0.6A TO92
- Datasheet:
- PN2907A
NXP USA Inc. PN2907A,126 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PN2907A,126.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)250
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPN2907A
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency200MHz
- Frequency - Transition200MHz
- Power Dissipation-Max (Abs)0.625W
- VCEsat-Max1.6 V
- Turn Off Time-Max (toff)100ns
- Turn On Time-Max (ton)45ns
- Collector-Base Capacitance-Max8pF
- RoHS StatusROHS3 Compliant
PN2907A,126 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 200MHz.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
PN2907A,126 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz
PN2907A,126 Applications
There are a lot of NXP USA Inc.
PN2907A,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 200MHz.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
PN2907A,126 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz
PN2907A,126 Applications
There are a lot of NXP USA Inc.
PN2907A,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN2907A,126 More Descriptions
Trans GP BJT PNP 60V 0.6A 3-Pin SPT Ammo
TRANS PNP 60V 0.6A TO92
PNP SWITCHING TRANSISTOR
IC REG LINEAR 2.8V 100MA SC88A
TRANS PNP 60V 0.6A TO92
PNP SWITCHING TRANSISTOR
IC REG LINEAR 2.8V 100MA SC88A
The three parts on the right have similar specifications to PN2907A,126.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxRoHS StatusFactory Lead TimeMountPbfree CodePin CountOperating Temperature (Max)Power Dissipation-MaxCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageDC Current Gain-Min (hFE)Supplier Device PackageView Compare
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PN2907A,126Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)2009e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.75Other TransistorsBOTTOM250unknown40PN2907AO-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGPNPPNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V600mA200MHz200MHz0.625W1.6 V100ns45ns8pFROHS3 Compliant-------------
-
-TO-226-3-SILICON--2017e0Active-3EAR99Tin/Lead (Sn/Pb)8541.21.00.75Other TransistorsBOTTOMNOT SPECIFIED-NOT SPECIFIED-O-PBCY-T3Not Qualified1SINGLE-SWITCHINGPNP------200MHz200MHz--100ns45ns-RoHS Compliant8 WeeksThrough Holeno3150°C625mW1.6V600mATO-9260V40-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)---------PN2907----625mW--PNP100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA40V800mA--------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---------PN2907A----625mW--PNP100 @ 150mA 10V20nA ICBO1.6V @ 50mA, 500mA60V800mA-200MHz-----------------TO-92-3
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