Fairchild/ON Semiconductor PN2222ATF
- Part Number:
- PN2222ATF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463173-PN2222ATF
- Description:
- TRANS NPN 40V 1A TO-92
- Datasheet:
- PN2222ATF
Fairchild/ON Semiconductor PN2222ATF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN2222ATF.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating1A
- Frequency300MHz
- Base Part NumberPN2222
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Turn Off Time-Max (toff)285ns
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PN2222ATF Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PN2222ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATF Applications
There are a lot of ON Semiconductor
PN2222ATF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PN2222ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATF Applications
There are a lot of ON Semiconductor
PN2222ATF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN2222ATF More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor GP BJT NPN 40V 1A 3-Pin TO-92 T/R - Tape and Reel
Transistor PN2222 General Purpose NPN 40 Volt 1A TO-92
TO-92-3L Bipolar Transistors - BJT ROHS
NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.Sourced from Process 19.
TRANSISTOR, BIPOL, NPN, 40V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1A; DC Current Gain hFE: 35hFE; Transistor Case Style: TO-226AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor GP BJT NPN 40V 1A 3-Pin TO-92 T/R - Tape and Reel
Transistor PN2222 General Purpose NPN 40 Volt 1A TO-92
TO-92-3L Bipolar Transistors - BJT ROHS
NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.Sourced from Process 19.
TRANSISTOR, BIPOL, NPN, 40V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1A; DC Current Gain hFE: 35hFE; Transistor Case Style: TO-226AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to PN2222ATF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationTurn On Time-Max (ton)View Compare
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PN2222ATFACTIVE (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3240mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V625mWBOTTOM1A300MHzPN22221Single625mWSWITCHING300MHzNPNNPN40V1A100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V300MHz1V40V75V6V100285ns5.33mm5.2mm4.19mmNo SVHCNoROHS3 CompliantLead Free--------------
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---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---------PN2222------NPN--100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA---------------TO-92-3625mW40V1A300MHz--------
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---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON-55°C~150°C TJTape & Box (TB)-e1yesObsolete1 (Unlimited)3-TIN SILVER COPPER---BOTTOM---1--SWITCHING-NPNNPN--100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-300MHz-----285ns-----ROHS3 Compliant--625mW40V600mA300MHzNO260403O-PBCY-T3COMMERCIALSINGLE35ns
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---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON-55°C~150°C TJTape & Box (TB)-e1yesObsolete1 (Unlimited)3-TIN SILVER COPPER---BOTTOM---1--SWITCHING-NPNNPN--100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-300MHz-----285ns-----ROHS3 Compliant--625mW40V600mA300MHzNO260403O-PBCY-T3COMMERCIALSINGLE35ns
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