Nexperia USA Inc. PMDT290UNE,115
- Part Number:
- PMDT290UNE,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2847720-PMDT290UNE,115
- Description:
- MOSFET 2N-CH 20V 0.8A SOT666
- ECAD Model:
-
- Datasheet:
- PMDT290UNE,115
Nexperia USA Inc. PMDT290UNE,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMDT290UNE,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Power Dissipation500mW
- Terminal FormFLAT
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation390mW
- Turn On Delay Time6 ns
- Power - Max500mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs380m Ω @ 500mA, 4.5V
- Vgs(th) (Max) @ Id950mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds83pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs0.68nC @ 4.5V
- Rise Time4ns
- Fall Time (Typ)31 ns
- Turn-Off Delay Time86 ns
- Continuous Drain Current (ID)800mA
- Gate to Source Voltage (Vgs)8V
- Max Dual Supply Voltage20V
- Drain Current-Max (Abs) (ID)0.8A
- Drain-source On Resistance-Max0.38Ohm
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PMDT290UNE,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMDT290UNE,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMDT290UNE,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PMDT290UNE,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PMDT290UNE,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PMDT290UNE,115 More Descriptions
PMDT290UNE - 20 V, 800 mA dual N-channel Trench MOSFET
Power Field-Effect Transistor, 0.8A I(D), N-Channel, Metal-oxide Semiconductor FET
Transistor MOSFET Array Dual N-CH 20V 800mA 6-Pin SOT-666 T/R
MOSFET, N CH, DUAL, 20V, 800MA, SOT666; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 800mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage
Mosfet, N Channel, Dual, 20V, 800Ma, Sot666; Channel Type:N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:800Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes |Nexperia PMDT290UNE,115
Power Field-Effect Transistor, 0.8A I(D), N-Channel, Metal-oxide Semiconductor FET
Transistor MOSFET Array Dual N-CH 20V 800mA 6-Pin SOT-666 T/R
MOSFET, N CH, DUAL, 20V, 800MA, SOT666; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 800mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage
Mosfet, N Channel, Dual, 20V, 800Ma, Sot666; Channel Type:N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:800Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes |Nexperia PMDT290UNE,115
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